In this paper,we propose a positivity-preserving finite element method for solving the three-dimensional quantum drift-diffusion model.The model consists of five nonlinear elliptic equations,and two of them describe q...In this paper,we propose a positivity-preserving finite element method for solving the three-dimensional quantum drift-diffusion model.The model consists of five nonlinear elliptic equations,and two of them describe quantum corrections for quasi-Fermi levels.We propose an interpolated-exponential finite element(IEFE)method for solving the two quantum-correction equations.The IEFE method always yields positive carrier densities and preserves the positivity of second-order differential operators in the Newton linearization of quantum-correction equations.Moreover,we solve the two continuity equations with the edge-averaged finite element(EAFE)method to reduce numerical oscillations of quasi-Fermi levels.The Poisson equation of electrical potential is solved with standard Lagrangian finite elements.We prove the existence of solution to the nonlinear discrete problem by using a fixed-point iteration and solving the minimum problem of a new discrete functional.A Newton method is proposed to solve the nonlinear discrete problem.Numerical experiments for a three-dimensional nano-scale FinFET device show that the Newton method is robust for source-to-gate bias voltages up to 9V and source-to-drain bias voltages up to 10V.展开更多
基金supported by National Key R&D Program of China 2019YFA0709600 and 2019YFA0709602Weiying Zheng was supported in part by National Key R&D Program of China 2019YFA0709600 and 2019YFA0709602the National Science Fund for Distinguished Young Scholars 11725106,and the NSFC major grant 11831016.
文摘In this paper,we propose a positivity-preserving finite element method for solving the three-dimensional quantum drift-diffusion model.The model consists of five nonlinear elliptic equations,and two of them describe quantum corrections for quasi-Fermi levels.We propose an interpolated-exponential finite element(IEFE)method for solving the two quantum-correction equations.The IEFE method always yields positive carrier densities and preserves the positivity of second-order differential operators in the Newton linearization of quantum-correction equations.Moreover,we solve the two continuity equations with the edge-averaged finite element(EAFE)method to reduce numerical oscillations of quasi-Fermi levels.The Poisson equation of electrical potential is solved with standard Lagrangian finite elements.We prove the existence of solution to the nonlinear discrete problem by using a fixed-point iteration and solving the minimum problem of a new discrete functional.A Newton method is proposed to solve the nonlinear discrete problem.Numerical experiments for a three-dimensional nano-scale FinFET device show that the Newton method is robust for source-to-gate bias voltages up to 9V and source-to-drain bias voltages up to 10V.
