Flexible photodetectors(PDs)comprised of low-dimensional organic-inorganic hybrid perovskites with perovskite quantum dots are expected to be the next generation wearable optoelectronic devices.A flexible Vis-NIR PD w...Flexible photodetectors(PDs)comprised of low-dimensional organic-inorganic hybrid perovskites with perovskite quantum dots are expected to be the next generation wearable optoelectronic devices.A flexible Vis-NIR PD which contains 2D Dion-Jacobson(DJ)perovskite(4AMP)(MA)_(2)Pb_(3)I_(10)(4AMP=4-(aminomethyl)piperidinium,MA=methylammonium)(n3)and micro concentration of CsPbI_(3)perovskite quantum dots(QDs)layered heterostructures was de-signed and synthesized in the current work.Controlled by the optimal concentration of QDs,the device response under 660 nm light was increased to 615%.The device combination as per mass of QDs exhibited strong photosensitivity and high-power output.The band gap between the two is minimal,which formed a matching structure and lowered the energy barrier of carrier transport process.QDs layer filled the gap of perovskite film,forming an almost defect-free heterostructure.QDs layer isolated water and passivated the perovskite layer,which therefore contributed to the high-performance of optoelectronic devices.Under the optimal concentration of QDs with up to 5000 bending cycles and different bending angles,the degradation of PDscouldbe ignored,and the devices tended to show a self-healing phenomenon with increasing bending cycles.The optimized strategy will be conducive to developing flexible,wearable,high-performance and low-cost PDs.展开更多
基金support from the National Natural Science Foundation of China(No.62204032)the Natural Science Foundation of Liaoning Province of China(2021-MS-08)the Fundamental Research Funds for the Central Universities,NEU(02060022121002).
文摘Flexible photodetectors(PDs)comprised of low-dimensional organic-inorganic hybrid perovskites with perovskite quantum dots are expected to be the next generation wearable optoelectronic devices.A flexible Vis-NIR PD which contains 2D Dion-Jacobson(DJ)perovskite(4AMP)(MA)_(2)Pb_(3)I_(10)(4AMP=4-(aminomethyl)piperidinium,MA=methylammonium)(n3)and micro concentration of CsPbI_(3)perovskite quantum dots(QDs)layered heterostructures was de-signed and synthesized in the current work.Controlled by the optimal concentration of QDs,the device response under 660 nm light was increased to 615%.The device combination as per mass of QDs exhibited strong photosensitivity and high-power output.The band gap between the two is minimal,which formed a matching structure and lowered the energy barrier of carrier transport process.QDs layer filled the gap of perovskite film,forming an almost defect-free heterostructure.QDs layer isolated water and passivated the perovskite layer,which therefore contributed to the high-performance of optoelectronic devices.Under the optimal concentration of QDs with up to 5000 bending cycles and different bending angles,the degradation of PDscouldbe ignored,and the devices tended to show a self-healing phenomenon with increasing bending cycles.The optimized strategy will be conducive to developing flexible,wearable,high-performance and low-cost PDs.
