Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by contro...Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.展开更多
Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin ...Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO acti...Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.展开更多
Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties...Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.展开更多
The SnO_2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infr...The SnO_2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infrared laser induced a fast photovoltaic effect arising from orthorhombic tin oxide film with an indirect band gap（~2.4 e V） which is deposited by pulsed laser deposition. The rising time of the photovoltaic signal is about 3 ns with a peak value of 4.48 mV under the pulsed laser beam with energy density 0.015 m J/mm^2. The relation between the photovoltages and laser positions along the line between two electrodes of the film is also exhibited. A possible mechanism is put forward to explain this phenomenon.All data and analyses demonstrate that the orthorhombic tin oxide with an indirect band gap could be used as a candidate for an infrared photodetector which can be operated at high pressures and temperatures.展开更多
The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precip...The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.展开更多
Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-...Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.展开更多
The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions thr...The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions through a noz-zle onto a heated alumina substrate. The precursor consisted separately of aqueous solutions of tin chloride for SnO2 and zinc chloride for ZnO for single oxide cases, and aqueous solutions of tin chloride and indium nitrate for SnO2 + In2O3 and zinc chloride and indium nitrate solutions for ZnO + In2O3 for mixed oxide cases. The substrate temperature was varied accordingly for each single and mixed case. The films produced were characterized by X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy. The results indicate that a non-homogenous film is formed at low temperature for both single oxides considered. The temperature has significant effect on the composition of the synthesized films of both single oxides below 450℃. The results for mixed oxides show that the best homogeneous films are obtained for 80 wt% ZnO + 20 wt% In2O3, and 80 wt% SnO2 + 20 wt% In2O3.展开更多
This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium pa...This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium passivation film coated on the tinplate surface under different treatment conditions were systematically characterized using the scanning Kelvin probe technique, X-ray photoelectron spectroscopy, and X-ray diffraction. Results indicate that the use of flux reduces the porosity of tin coating, thereby favoring the uniform growth of the passivation film. Furthermore, an increase in the reflow power and quenching temperature facilitates the homogeneous distribution of the passivation film on the tinplate surface,particularly when treated with electrolytic cathodic sodium dichromate.展开更多
Indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1...Indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 ~C. As the annealing temperature increases, the predominant orientation shifts from （222） to （400）. The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 ℃. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 ℃. Beyond 900 ℃, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples （TFTCs）. TFTCs annealed at 1,000 ℃ show improved high- temperature stability and Seebeck coefficients of up to 77.73 pV/℃.展开更多
文摘Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.
基金Supported by the National Natural Science Foundation of China （10776014） Nanjing University of Science and Technology （NUST） Research Funding
文摘Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61290305 and 91021020)the Natural Science Foundation of Zhejiang Province,China (Grant No.Z6100117)
文摘Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
基金supported by the National Natural Science Foundation of China under Grants No.60425101Young Excellence Project of University of Electronic Science and Technology of China(UESTC-060206)project.
文摘Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.
基金Project supported by the National Natural Science Foundation of China(Grant No.60877038)
文摘The SnO_2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infrared laser induced a fast photovoltaic effect arising from orthorhombic tin oxide film with an indirect band gap（~2.4 e V） which is deposited by pulsed laser deposition. The rising time of the photovoltaic signal is about 3 ns with a peak value of 4.48 mV under the pulsed laser beam with energy density 0.015 m J/mm^2. The relation between the photovoltages and laser positions along the line between two electrodes of the film is also exhibited. A possible mechanism is put forward to explain this phenomenon.All data and analyses demonstrate that the orthorhombic tin oxide with an indirect band gap could be used as a candidate for an infrared photodetector which can be operated at high pressures and temperatures.
基金supported by the National High-Tech Research and Development Program of China(No. 2004AA303542)
文摘The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.
基金support of the laboratory of active components and materials,Oum El Bouaghi University.
文摘Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.
文摘The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions through a noz-zle onto a heated alumina substrate. The precursor consisted separately of aqueous solutions of tin chloride for SnO2 and zinc chloride for ZnO for single oxide cases, and aqueous solutions of tin chloride and indium nitrate for SnO2 + In2O3 and zinc chloride and indium nitrate solutions for ZnO + In2O3 for mixed oxide cases. The substrate temperature was varied accordingly for each single and mixed case. The films produced were characterized by X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy. The results indicate that a non-homogenous film is formed at low temperature for both single oxides considered. The temperature has significant effect on the composition of the synthesized films of both single oxides below 450℃. The results for mixed oxides show that the best homogeneous films are obtained for 80 wt% ZnO + 20 wt% In2O3, and 80 wt% SnO2 + 20 wt% In2O3.
文摘This study aims to systematically analyze the key parameters of the reflow process that influence the uniformity of the chromium passivation film coated on tinplate. The distribution characteristics of the chromium passivation film coated on the tinplate surface under different treatment conditions were systematically characterized using the scanning Kelvin probe technique, X-ray photoelectron spectroscopy, and X-ray diffraction. Results indicate that the use of flux reduces the porosity of tin coating, thereby favoring the uniform growth of the passivation film. Furthermore, an increase in the reflow power and quenching temperature facilitates the homogeneous distribution of the passivation film on the tinplate surface,particularly when treated with electrolytic cathodic sodium dichromate.
基金financially supported by the National Natural Science Foundation of China (No.61223002)the State Key Laboratory of Electronic Thin Films and Integrated Devices Foundation of China (No.KFJJ201206)Science and Technology Innovation Foundation of Sichuan (No.2012ZZ020)
文摘Indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 ~C. As the annealing temperature increases, the predominant orientation shifts from （222） to （400）. The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 ℃. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 ℃. Beyond 900 ℃, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples （TFTCs）. TFTCs annealed at 1,000 ℃ show improved high- temperature stability and Seebeck coefficients of up to 77.73 pV/℃.
