Excellent fits to a couple of the data-sets on the temperature (T)-dependent upper critical field (Hc2) of H3S (critical temperature, Tc ≈ 200 K at pressure ≈ 150 GPa) reported by Mozaffari, et al. (2019) were obtai...Excellent fits to a couple of the data-sets on the temperature (T)-dependent upper critical field (Hc2) of H3S (critical temperature, Tc ≈ 200 K at pressure ≈ 150 GPa) reported by Mozaffari, et al. (2019) were obtained by Talantsev (2019) in an approach based on an ingenious mix of the Ginzberg-Landau (GL), the Werthamer, Helfand and Hohenberg (WHH), and the Gor’kov, etc., theories which have individually been employed for the same purpose for a long time. Up to the lowest temperature (TL) in each of these data-sets, similarly accurate fits have also been obtained by Malik and Varma (2023) in a radically different approach based on the Bethe-Salpeter equation (BSE) supplemented by the Matsubara and the Landau quantization prescriptions. For T TL, however, while the (GL, WHH, etc.)-based approach leads to Hc2(0) ≈ 100 T, the BSE-based approach leads to about twice this value even at 1 K. In this paper, a fit to one of the said data-sets is obtained for the first time via a thermodynamic approach which, up to TL, is as good as those obtained via the earlier approaches. While this is interesting per se, another significant result of this paper is that for T TL it corroborates the result of the BSE-based approach.展开更多
Excellent fits were obtained by Talantsev (MPLB 33, 1950195, 2019) to the temperature (T)-dependent upper critical field (H<sub>c</sub><sub>2</sub>(T)) data of H<sub>3</sub>S report...Excellent fits were obtained by Talantsev (MPLB 33, 1950195, 2019) to the temperature (T)-dependent upper critical field (H<sub>c</sub><sub>2</sub>(T)) data of H<sub>3</sub>S reported by Mozaffari et al. [Nature Communications 10, 2522 (2019)] by employing four alternative phenomenological models, each of which invoked two or more properties from its sample-specific set S<sub>1</sub> = {T<sub>c</sub>, gap, coherence length, penetration depth, jump in sp.ht.} and a single value of the effective mass (m*) of an electron. Based on the premise that the variation of H<sub>c</sub><sub>2</sub>(T) is due to the variation of the chemical potential μ(T), we report here fits to the same data by employing a T-, μ- and m*-dependent equation for H<sub>c</sub><sub>2</sub>(T) and three models of μ(T), viz. the linear, the parabolic and the concave-upward model. For temperatures up to which the data are available, each of these provides a good fit. However, for lower values of T, their predictions differ. Notably, the predicted values of H<sub>c</sub><sub>2</sub>(0) are much higher than in any of the models dealt with by Talantsev. In sum, we show here that the addressed data are explicable in a framework comprising the set S<sub>2</sub> = {μ, m*, interaction parameter λ<sub>m</sub>, Landau index N<sub>L</sub>}, which is altogether different from S<sub>1</sub>.展开更多
The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic ...The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder.展开更多
Using the recently developed finite-basis-set method with B splines, excited states of H atoms in a magnetic field have been calculated. Energy levels are presented for the ten excited states, 2so, 3d'0, 3po, 3p-1, 3...Using the recently developed finite-basis-set method with B splines, excited states of H atoms in a magnetic field have been calculated. Energy levels are presented for the ten excited states, 2so, 3d'0, 3po, 3p-1, 3d_1, 4d-1, 3d-2, 4d-2, 4f-2 , and 5f-2 as a function of magnetic field strengths with a range from zero up to 2.35 × 10^6 T. The obtained results are compared with available high accuracy theoretical data reported in the literature and found to be in excellent agreement. The comparison also shows that the current method can produce energy levels with an accuracy higher than the existing high accuracy method [Phys. Rev. A 54 (1996) 287]. Here high accuracy energy levels are for the first time reported for the 3d'0, 4d-1, 4d-2, 4f-2, and 5f-2 states.展开更多
We theoretically investigate the high-order-harmonic generation from the H2^+ molecular ion exposed to the combi- nation of an intense trapezoidal laser and a static field. The results show that the harmonic spectrum...We theoretically investigate the high-order-harmonic generation from the H2^+ molecular ion exposed to the combi- nation of an intense trapezoidal laser and a static field. The results show that the harmonic spectrum is obviously extended and the short quantum path is selected to contribute to the spectrum, because the corresponding long path is seriously suppressed. Then the combined Coulomb and laser field potentials and the time-dependent electron wave packet distributions are applied to illustrate the physical mechanism of high-order harmonic gen- eration. Finally, by adjusting the intensity of the static field and superposing a properly selected range of the HHG spectrum, a 90-as isolated attosecond pulse is straightforwardly obtained.展开更多
Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H-SiC metal...Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H-SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETs device.展开更多
We perform a kinetically complete measurement on the fragmentation of Coulomb explosion of 1-120 molecules in intense few-cycle linearly and circularly polarized laser fields. Both the fragmentations of 1t203+ and H...We perform a kinetically complete measurement on the fragmentation of Coulomb explosion of 1-120 molecules in intense few-cycle linearly and circularly polarized laser fields. Both the fragmentations of 1t203+ and H204+ reveal the concerted pathway of dissociation. The length of the OH bond prior to the Coulomb explosion of both molecular ions is sensitive to the laser pulse duration and laser intensity. However, the bending angle of H-O-H is less sensitive to the pulse duration and laser intensity. We introduce the mechanism of charge resonance enhanced double ionization to elucidate the triple (or quadruple) dissociative ionization dynamics of H20, in which two electrons are non-adiabatically localized at the protons of the precursor ion H2O^+ (or H2O^2+) and are released simultaneously due to the over barrier ionization in the combined laser field and molecular ionic potential. Such charge resonance enhanced multiple ionization is not suppressed in few-cycle laser fields and elliptically polarized laser fields.展开更多
Field effect transistors (FET) based on Single-Walled Carbon Nanotubes (SWNTs) become the hot topic in fields of nano-electronic, clinical diagnostics, environmental testing etc. in recent years. In this paper, we rep...Field effect transistors (FET) based on Single-Walled Carbon Nanotubes (SWNTs) become the hot topic in fields of nano-electronic, clinical diagnostics, environmental testing etc. in recent years. In this paper, we reported a simple, scalable way to enrich semiconducting SWNTs by using HNO3/H2SO4. Then carbon nanotube field-effect transistors (CNTFET) biosensor was fabricated with the enrichment SWNTs for Escherichia coli O157︰H7 detection. The response of each CNTFET was monitored in real time before and after introduction of the Escherichia coli O157︰H7 at various concentrations. The results show that CNT-FET biosensors we fabricated are sensitive to change of concentration of solution and response time is really short.展开更多
Based on μ-, T- and H-dependent pairing and number equations and the premise that μ(T) is predominantly the cause of the variation of the upper critical field H<sub>c</sub><sub>2</sub>(T), wh...Based on μ-, T- and H-dependent pairing and number equations and the premise that μ(T) is predominantly the cause of the variation of the upper critical field H<sub>c</sub><sub>2</sub>(T), where μ, T and H denote the chemical potential, temperature and the applied field, respectively, we provide in this paper fits to the empirical H<sub>c</sub><sub>2</sub>(T) data of H<sub>3</sub>S reported by Mozaffari, et al. (2019) and deal with the issue of whether or not H<sub>3</sub>S exhibits the Meissner effect. Employing a variant of the template given by Dogan and Cohen (2021), we examine in detail the results of Hirsch and Marsiglio (2022) who have claimed that H<sub>3</sub>S does not exhibit the Meissner effect and Minkov, et al. (2023) who have claimed that it does. We are thus led to suggest that monitoring the chemical potential (equivalently, the number density of Cooper pairs N<sub>s</sub> at T = T<sub>c</sub>) should shed new light on the issue being addressed.展开更多
文摘Excellent fits to a couple of the data-sets on the temperature (T)-dependent upper critical field (Hc2) of H3S (critical temperature, Tc ≈ 200 K at pressure ≈ 150 GPa) reported by Mozaffari, et al. (2019) were obtained by Talantsev (2019) in an approach based on an ingenious mix of the Ginzberg-Landau (GL), the Werthamer, Helfand and Hohenberg (WHH), and the Gor’kov, etc., theories which have individually been employed for the same purpose for a long time. Up to the lowest temperature (TL) in each of these data-sets, similarly accurate fits have also been obtained by Malik and Varma (2023) in a radically different approach based on the Bethe-Salpeter equation (BSE) supplemented by the Matsubara and the Landau quantization prescriptions. For T TL, however, while the (GL, WHH, etc.)-based approach leads to Hc2(0) ≈ 100 T, the BSE-based approach leads to about twice this value even at 1 K. In this paper, a fit to one of the said data-sets is obtained for the first time via a thermodynamic approach which, up to TL, is as good as those obtained via the earlier approaches. While this is interesting per se, another significant result of this paper is that for T TL it corroborates the result of the BSE-based approach.
文摘Excellent fits were obtained by Talantsev (MPLB 33, 1950195, 2019) to the temperature (T)-dependent upper critical field (H<sub>c</sub><sub>2</sub>(T)) data of H<sub>3</sub>S reported by Mozaffari et al. [Nature Communications 10, 2522 (2019)] by employing four alternative phenomenological models, each of which invoked two or more properties from its sample-specific set S<sub>1</sub> = {T<sub>c</sub>, gap, coherence length, penetration depth, jump in sp.ht.} and a single value of the effective mass (m*) of an electron. Based on the premise that the variation of H<sub>c</sub><sub>2</sub>(T) is due to the variation of the chemical potential μ(T), we report here fits to the same data by employing a T-, μ- and m*-dependent equation for H<sub>c</sub><sub>2</sub>(T) and three models of μ(T), viz. the linear, the parabolic and the concave-upward model. For temperatures up to which the data are available, each of these provides a good fit. However, for lower values of T, their predictions differ. Notably, the predicted values of H<sub>c</sub><sub>2</sub>(0) are much higher than in any of the models dealt with by Talantsev. In sum, we show here that the addressed data are explicable in a framework comprising the set S<sub>2</sub> = {μ, m*, interaction parameter λ<sub>m</sub>, Landau index N<sub>L</sub>}, which is altogether different from S<sub>1</sub>.
文摘The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder.
文摘Using the recently developed finite-basis-set method with B splines, excited states of H atoms in a magnetic field have been calculated. Energy levels are presented for the ten excited states, 2so, 3d'0, 3po, 3p-1, 3d_1, 4d-1, 3d-2, 4d-2, 4f-2 , and 5f-2 as a function of magnetic field strengths with a range from zero up to 2.35 × 10^6 T. The obtained results are compared with available high accuracy theoretical data reported in the literature and found to be in excellent agreement. The comparison also shows that the current method can produce energy levels with an accuracy higher than the existing high accuracy method [Phys. Rev. A 54 (1996) 287]. Here high accuracy energy levels are for the first time reported for the 3d'0, 4d-1, 4d-2, 4f-2, and 5f-2 states.
基金Supported by the National Natural Science Foundation of China under Grant No 11404204the Key Project of the Ministry of Education of China under Grant No 211025+1 种基金the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20111404120004the Natural Science Foundation for Young Scientists of Shanxi Province of China under Grant No2009021005
文摘We theoretically investigate the high-order-harmonic generation from the H2^+ molecular ion exposed to the combi- nation of an intense trapezoidal laser and a static field. The results show that the harmonic spectrum is obviously extended and the short quantum path is selected to contribute to the spectrum, because the corresponding long path is seriously suppressed. Then the combined Coulomb and laser field potentials and the time-dependent electron wave packet distributions are applied to illustrate the physical mechanism of high-order harmonic gen- eration. Finally, by adjusting the intensity of the static field and superposing a properly selected range of the HHG spectrum, a 90-as isolated attosecond pulse is straightforwardly obtained.
基金Project partly supported by National Defense Basic Research Program of China (Grant No 51327010101)
文摘Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H-SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETs device.
基金Supported by the National Basic Research Program of China under Grant No 2013CB922403the National Natural Science Foundation of China under Grant Nos 11125416,11434002,11121091 and 11134001
文摘We perform a kinetically complete measurement on the fragmentation of Coulomb explosion of 1-120 molecules in intense few-cycle linearly and circularly polarized laser fields. Both the fragmentations of 1t203+ and H204+ reveal the concerted pathway of dissociation. The length of the OH bond prior to the Coulomb explosion of both molecular ions is sensitive to the laser pulse duration and laser intensity. However, the bending angle of H-O-H is less sensitive to the pulse duration and laser intensity. We introduce the mechanism of charge resonance enhanced double ionization to elucidate the triple (or quadruple) dissociative ionization dynamics of H20, in which two electrons are non-adiabatically localized at the protons of the precursor ion H2O^+ (or H2O^2+) and are released simultaneously due to the over barrier ionization in the combined laser field and molecular ionic potential. Such charge resonance enhanced multiple ionization is not suppressed in few-cycle laser fields and elliptically polarized laser fields.
文摘Field effect transistors (FET) based on Single-Walled Carbon Nanotubes (SWNTs) become the hot topic in fields of nano-electronic, clinical diagnostics, environmental testing etc. in recent years. In this paper, we reported a simple, scalable way to enrich semiconducting SWNTs by using HNO3/H2SO4. Then carbon nanotube field-effect transistors (CNTFET) biosensor was fabricated with the enrichment SWNTs for Escherichia coli O157︰H7 detection. The response of each CNTFET was monitored in real time before and after introduction of the Escherichia coli O157︰H7 at various concentrations. The results show that CNT-FET biosensors we fabricated are sensitive to change of concentration of solution and response time is really short.
文摘Based on μ-, T- and H-dependent pairing and number equations and the premise that μ(T) is predominantly the cause of the variation of the upper critical field H<sub>c</sub><sub>2</sub>(T), where μ, T and H denote the chemical potential, temperature and the applied field, respectively, we provide in this paper fits to the empirical H<sub>c</sub><sub>2</sub>(T) data of H<sub>3</sub>S reported by Mozaffari, et al. (2019) and deal with the issue of whether or not H<sub>3</sub>S exhibits the Meissner effect. Employing a variant of the template given by Dogan and Cohen (2021), we examine in detail the results of Hirsch and Marsiglio (2022) who have claimed that H<sub>3</sub>S does not exhibit the Meissner effect and Minkov, et al. (2023) who have claimed that it does. We are thus led to suggest that monitoring the chemical potential (equivalently, the number density of Cooper pairs N<sub>s</sub> at T = T<sub>c</sub>) should shed new light on the issue being addressed.