Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method

Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.

Tunneling of Bose-Einstein condensate and interference effect in a harmonic trap with a Gaussian energy barrier

The tunneling effect of Bose-Einstein condensate （BEC） in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.

Tunneling effect in cavity-resonator-coupled arrays

The quantum tunneling effect （QTE） in a cavity-resonator-coupled （CRC） array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation.

An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation

The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.

Analytical solutions for the restraint effect of isolation piles against tunneling-induced vertical ground displacements

This paper presents a simplified elastic continuum method for calculating the restraint effect of isolation piles on tunneling-induced vertical ground displacement,which can consider not only the relative sliding of the pile‒soil interface but also the pile rowesoil interaction.The proposed method is verified by comparisons with existing theoretical methods,including the boundary element method and the elastic foundation method.The results reveal the restraining mechanism of the isolation piles on vertical ground displacements due to tunneling,i.e.the positive and negative restraint effects exerted by the isolation piles jointly drive the ground vertical displacement along the depth direction from the original tunneling-induced nonlinear variation situation to a relatively uniform situation.The results also indicate that the stiffness of the pile‒soil interface,including the pile shaft‒surrounding soil interface and pile tip-supporting soil interface,describes the strength of the pile‒soil interaction.The pile rows can confine the vertical ground displacement caused by the tunnel excavation to the inner side of the isolation piles and effectively prevent the vertical ground displacement from expanding further toward the outer side of the isolation piles.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Spin Parity Effect on Magnetic Relaxation by Quantum Tunneling in Nanomagnets

Spin parity effect on magnetic relaxation by quantum tunneling in the biaxial spin model is studied by taking into account the transverse local stray field. It is shown that the square root time dependence in the even resonance occurs in the presence of a distribution of transverse anisotropic parameters, while the odd resonance always shows exponential relaxation. Magnetic relaxation under a sweeping field is also studied. The variation of the relaxation curve with the increasing distribution width of the local stray field for even resonance is qualitatively different from that of the odd resonance. The theoretical result on even resonance is in agreement with experimental results on Fe8 system, while the prediction for odd resonance awaits the experimental verification.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

Proposal on Tunneling Effect between Quantum Hall States

In the integer and fractional quantum Hall effects, the electric current flows through a thin layer under the strong magnetic field. The diagonal resistance becomes very small at integer and specific fractional filling factors where the electron scatterings are very few. Accordingly the coherent length is large and therefore a tunneling effect of electrons may be observed. We consider a new type of a quantum Hall device which has a narrow potential barrier in the thin layer. Then the electrons flow with tunneling effect through the potential barrier. When the oscillating magnetic field is applied in addition to the constant field, the voltage steps may appear in the curve of voltage V versus electric current I. If the voltage steps are found in the experiment, it is confirmed that the 2D electron system yields the same phenomenon as that of the ac-Josephson effect in a superconducting system. Furthermore the step V is related to the transfer charge Q as V = (hf)/Q where f is the frequency of the oscillating field and h is the Planck constant. Then the detection of the step V determines the transfer charge Q. The ratio Q/e (e is the elementary charge) clarifies the origin of the transfer charge. Many conditions are required for us to observe the tunneling phenomenon. The conditions are examined in details in this article.

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.

Nonequilibrium Effect in Ferromagnet-Insulator-Superconductor Tunneling Junction Currents

Nonequilibrium effect due to the imbalance in the number of the ? and ? spin electrons has been studied for the tunneling currents in the ferromagnet-insulator-superconductor (FIS) tunneling junctions within a phenomenological manner. It has been stated how the nonequilibrium effect should be observed in the spin-polarized quasiparticle tunneling currents, and pointed out that the detectable nonequilibrium effect could be found in the FIS tunneling junction at 77 K using HgBa2Ca2Cu3O8+? (Hg-1223) high-Tc superconductor rather than Bi2Sr2CaCu2O8+? (Bi-2212) one.

Quantum Coupling Effect between Quantum Dot and Quantum Well in a Resonant Tunneling Photon-Number-Resolving Detector

Excited states of lnAs quantum dots （QDs） can be energetically coupled with the confined level of OaAs quantum wells （QWs） in a thin-barrier resonant tunneling diode （RTD）. Single charge variation in the coupled QD can effectively switch on/off the resonant tunneling current passing through RTD, not only for emcient single-photon detection but also for photon-number-resolving detection. We present the study of the Q,D-QW coupling effect in the quantum dot coupled resonant tunneling diode （QD-cRTD） and figure out important factors for further improving the detector performance.

Tunneling Effect Enhanced by Pd Screening as Main LENR Mechanism:A Brief Theoretical Impression

In this paper are illustrated the main features of tunneling travelling between two deuterons within a lattice. Considering thescreening effect due to lattice electrons we compare the d-d fusion rate evaluated from different authors assuming different screeningefficiency and different d-d potentials. Then, we propose an effective potential which describes very well the attractive contribution dueto Plasmon exchange between two deuterons and by means of it we will compute the d-d fusion rates for different energy values.

Characteristics of cylindrical surrounding-gate GaAs_xSb_(1-x)/In_yGa_(1-y)As heterojunction tunneling field-effect transistors

A Ⅲ-Ⅴ heterojunction tunneling field-effect transistor(TFET) can enhance the on-state current effectively,and GaAsSb/InGaAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition.In this paper,the performance of the cylindrical surrounding-gate GaAsSb/InGaAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation.We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing(SS),while increasing source doping concentration and adjusting the composition of GaAsSbInGaAs can improve the on-state current.In addition,the resonant TFET based on GaAsSb/InGaAs is also studied,and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current,respectively,and is much superior to the conventional TFET.

Tunneling Effect Enhanced by Pd Screening as Main LENR Mechanism:A Brief Theoretical Impression

In this paper the main features of tunneling travelling are illustrated between two deuterons within a lattice.Considering the screening effect due to lattice electrons we compared the d-d fusion rate evaluated from different authors assuming different screening efficiency and different d-d potentials.Then,we proposed an effective potential which describes very well the attractive contribution due to plasmon exchange between two deuterons and by means of it we will compute the d-d fusion rates for different energy values.

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two depletion regions.Then based on the physical definition of threshold voltage for the nanoscale TFET,the threshold voltage model is developed.The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data.It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper.This threshold voltage model provides a valuable reference to TFET device design,simulation,and fabrication.

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

By using the linear combination of bulk band （LCBB） method incorporated with the top of the barrier splitting （TBS） model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate （DG） metal-oxide semiconductor field-effect transistors （MOSFETs）. A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness （2.0 nm and below） by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry-Etched MEMS Tunneling Accelerometer

A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.The tunneling current under open loop operation is tested in the air by HP4145B semiconductor analyzer,which verifies the presence of tunneling current and the exponential relationship between tunneling gap and tunneling current.The tunneling barrier is extrapolated to be from 1.182 to 2.177eV.The threshold voltages are tested to be 14～16V for most of the devices.The threshold voltages under -1,0,and +1g are tested,respectively,which shows the sensitivity of the accelerometer is about 87mV/g.