The ρ(NH2) infrared(IR) frequencies and the corresponding full width at half maximum(FWHM) values for(CH3)2 NH2 FeⅢ M Ⅱ(HCOO)6(DMFe M, M = Ni, Zn, Cu, Fe, and Mg) are analyzed at various temperatures by using the e...The ρ(NH2) infrared(IR) frequencies and the corresponding full width at half maximum(FWHM) values for(CH3)2 NH2 FeⅢ M Ⅱ(HCOO)6(DMFe M, M = Ni, Zn, Cu, Fe, and Mg) are analyzed at various temperatures by using the experimental data from the literature. For the analysis of the IR frequencies of the ρ(NH2) mode which is associated with the structural phase transitions in those metal structures, the temperature dependence of the mode frequency is assumed as an order parameter and the IR frequencies are calculated by using the molecular field theory. Also, the temperature dependence of the IR frequencies and of the damping constant as calculated from the models of pseudospin(dynamic disorder of dimethylammonium(DMA+) cations)–phonon coupling(PS) and of the energy fluctuation(EF), is fitted to the observed data for the wavenumber and FWHM of the ρ(NH2) IR mode of the niccolites studied here. We find that the observed behavior of the IR frequencies and the FWHM of this mode can be described adequately by the models studied for the crystalline structures of interest. This method of calculating the frequencies(IR and Raman) and FWHM of modes which are responsible for the phase transitions can also be applied to some other metal organic frameworks.展开更多
Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases ...Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.展开更多
文摘The ρ(NH2) infrared(IR) frequencies and the corresponding full width at half maximum(FWHM) values for(CH3)2 NH2 FeⅢ M Ⅱ(HCOO)6(DMFe M, M = Ni, Zn, Cu, Fe, and Mg) are analyzed at various temperatures by using the experimental data from the literature. For the analysis of the IR frequencies of the ρ(NH2) mode which is associated with the structural phase transitions in those metal structures, the temperature dependence of the mode frequency is assumed as an order parameter and the IR frequencies are calculated by using the molecular field theory. Also, the temperature dependence of the IR frequencies and of the damping constant as calculated from the models of pseudospin(dynamic disorder of dimethylammonium(DMA+) cations)–phonon coupling(PS) and of the energy fluctuation(EF), is fitted to the observed data for the wavenumber and FWHM of the ρ(NH2) IR mode of the niccolites studied here. We find that the observed behavior of the IR frequencies and the FWHM of this mode can be described adequately by the models studied for the crystalline structures of interest. This method of calculating the frequencies(IR and Raman) and FWHM of modes which are responsible for the phase transitions can also be applied to some other metal organic frameworks.
基金supported by the National Basic Research Program of China(Grant No.2012CB619306)the National High Technology Research and Development Program of China(Grant No.2011AA03A101)
文摘Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.
