A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The si...A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.展开更多
This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around（GAA） MOSFETs.The important analog and RF p...This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around（GAA） MOSFETs.The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs,namely drain current（/d）,transconductance to drain current ratio（g_m/I_d）,I_（on）/I_（off）,the cut-off frequency（f_T） and the maximum frequency of oscillation（/max） are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator,ATLAS^（TM）.It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics（g_m/I_d,f_T and /max） compared to the nanowire-based gate-all-around GAA MOSFETs.The silicon-nanotube MOSFET shows an improvement of ~2.5 and 3 times in the case of f_T and /max values respectively compared with the nanowire-based gate-all-around（GAA） MOSFET.展开更多
基金supported by the National Natural Science Foundation of China(No.61176100)
文摘A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.
基金supported by the Defence Research and Development Organisation(DRDO),Ministry of Defence,Govt.of India(No.CC/TM/ERIPR/GIA/1516/020)
文摘This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around（GAA） MOSFETs.The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs,namely drain current（/d）,transconductance to drain current ratio（g_m/I_d）,I_（on）/I_（off）,the cut-off frequency（f_T） and the maximum frequency of oscillation（/max） are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator,ATLAS^（TM）.It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics（g_m/I_d,f_T and /max） compared to the nanowire-based gate-all-around GAA MOSFETs.The silicon-nanotube MOSFET shows an improvement of ~2.5 and 3 times in the case of f_T and /max values respectively compared with the nanowire-based gate-all-around（GAA） MOSFET.
