The effects of growth time on the structure and morphology of cubic GaN nucleation layers on GaAs(001)substrates by metalorganic chemical vapor deposition (MOCVD) have been investigated using a synchrotron X-ray diffr...The effects of growth time on the structure and morphology of cubic GaN nucleation layers on GaAs(001)substrates by metalorganic chemical vapor deposition (MOCVD) have been investigated using a synchrotron X-ray diffraction(XRD).The XRD results show that the GaN 111 reflections at 54.75° inχ are a measurable component,however the 002 reflections parallel to GaAs(001) surface are not detected.The XRD Φ scans and pole figures give a convincing proof that the GaN nucleation latyers show exactly the cubic symmetrical structure.The coherence lengths along the close-packed<111> direction estuimated from the 111 peak are nanometer order of magnitude,The optimal photoluminescence (PL) spectrum was obtained from the cubic GaN epilayer deposited on the nucleation layer for 60sec.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 091021015 and 61376015, the Key Basic Research Programs of Shanghai under Grant No 13JC1405900, and the Australian Research Council.
文摘The effects of growth time on the structure and morphology of cubic GaN nucleation layers on GaAs(001)substrates by metalorganic chemical vapor deposition (MOCVD) have been investigated using a synchrotron X-ray diffraction(XRD).The XRD results show that the GaN 111 reflections at 54.75° inχ are a measurable component,however the 002 reflections parallel to GaAs(001) surface are not detected.The XRD Φ scans and pole figures give a convincing proof that the GaN nucleation latyers show exactly the cubic symmetrical structure.The coherence lengths along the close-packed<111> direction estuimated from the 111 peak are nanometer order of magnitude,The optimal photoluminescence (PL) spectrum was obtained from the cubic GaN epilayer deposited on the nucleation layer for 60sec.
