New Ge/SiO_2 glasses have been synthesized by heating the GeO_2/SiO_2 dry gels under H_2gas at 700℃. The resulting fluorescence spectra show that this kind of Ge/SiO_2 glasses emit strongphotoluminescence at 392 nm (...New Ge/SiO_2 glasses have been synthesized by heating the GeO_2/SiO_2 dry gels under H_2gas at 700℃. The resulting fluorescence spectra show that this kind of Ge/SiO_2 glasses emit strongphotoluminescence at 392 nm (3.12 eV), medium strong photoluminescence at 600 nm (2.05 eV)and weak photoluminescence at 770 nm (1.60 eV) respectively. Possible photoluminescencemechanisms are also discussed based on the results of X-ray diffraction (XRD) and X-rayphotoelectron spectra(XPS).展开更多
锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角...锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角在8~12μm长波红外波段对反射率的影响,确定了微结构在低反射情况下较优的结构参数组合,其在整个波段范围内的平均反射率低于1%,远低于平板锗结构的35.47%,在9~11μm的波段范围内反射率低于0.5%,且光波在40°范围内入射时,圆锥形微结构的平均反射率仍然较低。将优化的圆锥形微结构与平板结构进行了对比,从等效折射率、反射场分布和能量吸收分布3方面进一步证实了圆锥形微结构在整个波段范围内优异的减反射性能。展开更多
为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻...为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。展开更多
为研究气体离心法分离^(72)Ge同位素的技术,以四氟化锗(GeF 4)为分离介质,通过理论计算,探索通过短级联浓缩法生产^(72)Ge的可能性。计算结果表明,使用相对丰度匹配级联(matched abundance ratio cascade,MARC)模型,两次分离后可以得到...为研究气体离心法分离^(72)Ge同位素的技术,以四氟化锗(GeF 4)为分离介质,通过理论计算,探索通过短级联浓缩法生产^(72)Ge的可能性。计算结果表明,使用相对丰度匹配级联(matched abundance ratio cascade,MARC)模型,两次分离后可以得到丰度高于55%的^(72)Ge。在实验室现有的离心级联上,采用21级阶梯级联的结构,通过调整级联内部工况和外参量,对级联分离性能进行优化。经过两次分离实验后,最终得到^(72)Ge丰度高于60%的产品。展开更多
SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the s...SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm^-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum （BWHM） Wit2 of the 710 cm^-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.展开更多
文摘New Ge/SiO_2 glasses have been synthesized by heating the GeO_2/SiO_2 dry gels under H_2gas at 700℃. The resulting fluorescence spectra show that this kind of Ge/SiO_2 glasses emit strongphotoluminescence at 392 nm (3.12 eV), medium strong photoluminescence at 600 nm (2.05 eV)and weak photoluminescence at 770 nm (1.60 eV) respectively. Possible photoluminescencemechanisms are also discussed based on the results of X-ray diffraction (XRD) and X-rayphotoelectron spectra(XPS).
文摘锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角在8~12μm长波红外波段对反射率的影响,确定了微结构在低反射情况下较优的结构参数组合,其在整个波段范围内的平均反射率低于1%,远低于平板锗结构的35.47%,在9~11μm的波段范围内反射率低于0.5%,且光波在40°范围内入射时,圆锥形微结构的平均反射率仍然较低。将优化的圆锥形微结构与平板结构进行了对比,从等效折射率、反射场分布和能量吸收分布3方面进一步证实了圆锥形微结构在整个波段范围内优异的减反射性能。
文摘为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。
文摘为研究气体离心法分离^(72)Ge同位素的技术,以四氟化锗(GeF 4)为分离介质,通过理论计算,探索通过短级联浓缩法生产^(72)Ge的可能性。计算结果表明,使用相对丰度匹配级联(matched abundance ratio cascade,MARC)模型,两次分离后可以得到丰度高于55%的^(72)Ge。在实验室现有的离心级联上,采用21级阶梯级联的结构,通过调整级联内部工况和外参量,对级联分离性能进行优化。经过两次分离实验后,最终得到^(72)Ge丰度高于60%的产品。
基金The work is financially supported by the National Natural Science Foundation of China (No. 59772037)the NaturalScience Foundation of Hebei Province, China (No. 500016).
文摘SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm^-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum （BWHM） Wit2 of the 710 cm^-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.
