Growth and ordering of coherently strained Ge-rich islands in Ge/Si single layer and multilayer systems and the influence of island arrangements on the evolutio n of the surface morphology of Si cap layers during depo...Growth and ordering of coherently strained Ge-rich islands in Ge/Si single layer and multilayer systems and the influence of island arrangements on the evolutio n of the surface morphology of Si cap layers during deposition by low-pressure c hemical vapour deposition(LPCVD) on Si(001) substrates at 700℃ have been invest igated by TEM of cross-section and plan-view specimens. At distances between the Ge layers of 35-50nm, vertical order of GeSi islands is observed for Ge-Si bila yer systems and for Ge-Si multilayer systems consisting of 5 layer pairs whereas lateral ordering parallel to <100> substrate directions is observed for the lat ter case only. In agreement with earlier results the vertical ordering in the mu ltilayer system can be understood as result of the elastic interaction between i sland nuclei forming in the layers with close islands in a buried layer below. T he lateral ordering along <100> may be attributed to the anisotropy of the elast ic interaction. Characteristic for all Si surfaces are the spatial correlation b etween the presence of island-induced lattice strain and the appearance of array s of larger square-shaped pyramids with distinct faceting and facet edges along <110>. The results reflect the importance of the control of growth parameters an d of the island-induced strain state for the evolution of the Si top layer surfa ce morphology during LPCVD growth.展开更多
文摘Growth and ordering of coherently strained Ge-rich islands in Ge/Si single layer and multilayer systems and the influence of island arrangements on the evolutio n of the surface morphology of Si cap layers during deposition by low-pressure c hemical vapour deposition(LPCVD) on Si(001) substrates at 700℃ have been invest igated by TEM of cross-section and plan-view specimens. At distances between the Ge layers of 35-50nm, vertical order of GeSi islands is observed for Ge-Si bila yer systems and for Ge-Si multilayer systems consisting of 5 layer pairs whereas lateral ordering parallel to <100> substrate directions is observed for the lat ter case only. In agreement with earlier results the vertical ordering in the mu ltilayer system can be understood as result of the elastic interaction between i sland nuclei forming in the layers with close islands in a buried layer below. T he lateral ordering along <100> may be attributed to the anisotropy of the elast ic interaction. Characteristic for all Si surfaces are the spatial correlation b etween the presence of island-induced lattice strain and the appearance of array s of larger square-shaped pyramids with distinct faceting and facet edges along <110>. The results reflect the importance of the control of growth parameters an d of the island-induced strain state for the evolution of the Si top layer surfa ce morphology during LPCVD growth.
