In this paper, we investigate a one-dimensional bipolar quantum drift-diffusion model from semiconductor devices. We mainly show the long-time behavior of solutions to the one-dimensional bipolar quantum drift-diffusi...In this paper, we investigate a one-dimensional bipolar quantum drift-diffusion model from semiconductor devices. We mainly show the long-time behavior of solutions to the one-dimensional bipolar quantum drift-diffusion model in a bounded domain. That is, we prove the existence of the global attractor for the solution.展开更多
基金Supported by the National Natural Science Foundation of China(11671134)
文摘In this paper, we investigate a one-dimensional bipolar quantum drift-diffusion model from semiconductor devices. We mainly show the long-time behavior of solutions to the one-dimensional bipolar quantum drift-diffusion model in a bounded domain. That is, we prove the existence of the global attractor for the solution.
