The growth of AlGaAsSb quatornary alloys is described. In order to control the epimxial growth ofAIGaAsSb, emphasis is given on the deposition rates, growth temperatures and the relationship between growthconditions a...The growth of AlGaAsSb quatornary alloys is described. In order to control the epimxial growth ofAIGaAsSb, emphasis is given on the deposition rates, growth temperatures and the relationship between growthconditions and the distribution coefficients of Al and As. Whether the growth of AlGaAsSb epilayers is con-trolled by chemical reactions or by mass diffusion depends on the growth temperatures. This argument is veri-fied by kinetic considerations. Specular surfaces of AlGaAsSb on GaSb substrates were obtained. The composi-tional nonuniformities measured by electron probe micro-analysis (EPMA) are less than 0. 6% on area of 15× 15 mm￣2. The crystallinity is measured by double crystal X-ray diffraction (DCXD). The lattice mismatchbetween AlGaAsSb epilayer and GaSb subetrato is estimated to be less than 5. 5 × 10￣(-4).展开更多
文摘The growth of AlGaAsSb quatornary alloys is described. In order to control the epimxial growth ofAIGaAsSb, emphasis is given on the deposition rates, growth temperatures and the relationship between growthconditions and the distribution coefficients of Al and As. Whether the growth of AlGaAsSb epilayers is con-trolled by chemical reactions or by mass diffusion depends on the growth temperatures. This argument is veri-fied by kinetic considerations. Specular surfaces of AlGaAsSb on GaSb substrates were obtained. The composi-tional nonuniformities measured by electron probe micro-analysis (EPMA) are less than 0. 6% on area of 15× 15 mm￣2. The crystallinity is measured by double crystal X-ray diffraction (DCXD). The lattice mismatchbetween AlGaAsSb epilayer and GaSb subetrato is estimated to be less than 5. 5 × 10￣(-4).
