采用射频磁控溅射法在普通玻璃衬底上制备了Ga_2O_3含量为3wt.%的掺镓氧化锌透明导电薄膜(GZO)。通过X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、四探针测试仪、台阶仪、UV-Vis-NIR3600型紫外-可见分光光度计研究了溅射时间对薄膜...采用射频磁控溅射法在普通玻璃衬底上制备了Ga_2O_3含量为3wt.%的掺镓氧化锌透明导电薄膜(GZO)。通过X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、四探针测试仪、台阶仪、UV-Vis-NIR3600型紫外-可见分光光度计研究了溅射时间对薄膜结构、表面形貌及光电性能的影响。结果表明,溅射时间为40 min时制备的GZO薄膜的光电综合性能最好,可见光区透过率峰值86%,方阻为16.4Ω/□,电阻率为1.18×10-3Ω·cm,性能指数ΦTC为4.73×10^(-3)Ω-1;随着溅射时间增加,薄膜光学带系从3.69 e V减少到3.56 e V。在溅射时间60 min时结晶度最高,方块电阻为9.0Ω/□,电阻率最低为9.7×10-4Ω·cm,可见光透过率峰值为81%。展开更多
The effect of annealing in air and oxygen on structural, electrical and optical properties of gallium doped ZnO thin films was investigated. The X-ray diffraction patterns showed that the films were highly preferentia...The effect of annealing in air and oxygen on structural, electrical and optical properties of gallium doped ZnO thin films was investigated. The X-ray diffraction patterns showed that the films were highly preferentially oriented along (002) plane. After the heat treatment in air and oxygen environments, the intensity of (002) peak was apparently improved. It was found that heat treatment in air atmospheres lead to increase in surface roughness of the film. The GZO films annealed in oxygen at 673 K exhibited low resistivity of 4.21 × 10–3 Ω.cm, while the resistivity of film annealed in air showed a slightly higher value of 7.14 × 10–3 Ω.cm. In addition to this, all films have good optical transmittance about 80% in the visible region. It is found from the photoluminescence studies that the broad visible emissions in GZO films originated from the intrinsic shallow traps (VZn) and deep level vacancies (ZZi, OZn and Vo)展开更多
基金Supported by Fund PLA General Armament Department"The 15th Five-year"weapons and Equipments Pre-research Field Fundation"Bas-ic application technology of graphene materials in batteries"(6140721040412)
文摘采用射频磁控溅射法在普通玻璃衬底上制备了Ga_2O_3含量为3wt.%的掺镓氧化锌透明导电薄膜(GZO)。通过X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、四探针测试仪、台阶仪、UV-Vis-NIR3600型紫外-可见分光光度计研究了溅射时间对薄膜结构、表面形貌及光电性能的影响。结果表明,溅射时间为40 min时制备的GZO薄膜的光电综合性能最好,可见光区透过率峰值86%,方阻为16.4Ω/□,电阻率为1.18×10-3Ω·cm,性能指数ΦTC为4.73×10^(-3)Ω-1;随着溅射时间增加,薄膜光学带系从3.69 e V减少到3.56 e V。在溅射时间60 min时结晶度最高,方块电阻为9.0Ω/□,电阻率最低为9.7×10-4Ω·cm,可见光透过率峰值为81%。
文摘The effect of annealing in air and oxygen on structural, electrical and optical properties of gallium doped ZnO thin films was investigated. The X-ray diffraction patterns showed that the films were highly preferentially oriented along (002) plane. After the heat treatment in air and oxygen environments, the intensity of (002) peak was apparently improved. It was found that heat treatment in air atmospheres lead to increase in surface roughness of the film. The GZO films annealed in oxygen at 673 K exhibited low resistivity of 4.21 × 10–3 Ω.cm, while the resistivity of film annealed in air showed a slightly higher value of 7.14 × 10–3 Ω.cm. In addition to this, all films have good optical transmittance about 80% in the visible region. It is found from the photoluminescence studies that the broad visible emissions in GZO films originated from the intrinsic shallow traps (VZn) and deep level vacancies (ZZi, OZn and Vo)
