Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound form...Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes： 〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.展开更多
The Knudsen effusion cell is often used to grow high-quality Cu(In,Ga)Se_(2)(CIGS)thin film in coevaporation processes.However,the traditional single-heating Knudsen effusion cell cannot deliver complete metal selenid...The Knudsen effusion cell is often used to grow high-quality Cu(In,Ga)Se_(2)(CIGS)thin film in coevaporation processes.However,the traditional single-heating Knudsen effusion cell cannot deliver complete metal selenides during the whole deposition process,particularly for a low-temperature deposition process,which is probably due to the condensation and droplet ejection at the nozzle of the crucible.In this study,thermodynamics analysis is conducted to decipher the reason for this phenomenon.Furthermore,a new single-heating Knudsen effusion is proposed to solve this difficult problem,which leads to an improvement in the quality of CIGS film and a relative increase in conversion efficiency of 29%at a growth rate of about 230 nmmin1,compared with the traditional efficiency in a lowtemperature rapid-deposition process.展开更多
The lowest energies which make Cu,In,Ga,and Se atoms composing Cu（In,Ga）Se_2（CIGS） material displaced from their lattice sites are evaluated,respectively.The non-ionizing energy loss（NIEL） for electron in CIGS m...The lowest energies which make Cu,In,Ga,and Se atoms composing Cu（In,Ga）Se_2（CIGS） material displaced from their lattice sites are evaluated,respectively.The non-ionizing energy loss（NIEL） for electron in CIGS material is calculated analytically using the Mott differential cross section.The relation of the introduction rate（k） of the recombination centers to NIEL is modified,then the values of k at different electron energies are calculated.Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers.The validity of the modeling approach is verified by comparison with the experimental data.展开更多
In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental...In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 10<sup>16</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup> and the defect density less than 10<sup>14</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup>. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe<sub>2</sub> layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm<sup>2</sup> in the current density (<em>J<sub>sc</sub></em>) depending on the absorber thickness is obtained.展开更多
In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly...In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.展开更多
Cu(In,Ga)Se_(2)(CIGS)is a promising candidate to replace crystalline silicon solar cells and dominate the photovoltaic market in the future.Alkali elements such as sodium(Na),potassium(K),rubidium(Rb),and Cesium(Cs)ar...Cu(In,Ga)Se_(2)(CIGS)is a promising candidate to replace crystalline silicon solar cells and dominate the photovoltaic market in the future.Alkali elements such as sodium(Na),potassium(K),rubidium(Rb),and Cesium(Cs)are commonly accepted as indispensable parts to boost cell efficiencies of CIGS thin-film solar cells.Therefore,a comprehensive understanding of alkali effects on the electronic and chemical properties of the CIGS layer as well as the underlying mechanisms is of paramount importance for achieving high-performance solar cells.This paper reviews the development process and incorporation pathways of alkalis and then overviews the roles of different alkali elements and their effects on CIGS cells in detail.Furthermore,the unsolved problems and future development prospects are also proposed.Overall,the understanding and development of widely adopted alkali-fluoride post-deposition treatments(PDTs)are still underway,and together with newly updated research,it will likely enable the CIGS technology to make the conversion efficiency closer to its theoretical limit.展开更多
Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting ...Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.展开更多
文摘Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes： 〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.
基金The work was supported by the National Key R&D Program of China(2018YFB1500200)the National Natural Science Foundation of China(61774089 and 61974076)the Natural Science Foundation of Tianjin(18JCZDJC31200).
文摘The Knudsen effusion cell is often used to grow high-quality Cu(In,Ga)Se_(2)(CIGS)thin film in coevaporation processes.However,the traditional single-heating Knudsen effusion cell cannot deliver complete metal selenides during the whole deposition process,particularly for a low-temperature deposition process,which is probably due to the condensation and droplet ejection at the nozzle of the crucible.In this study,thermodynamics analysis is conducted to decipher the reason for this phenomenon.Furthermore,a new single-heating Knudsen effusion is proposed to solve this difficult problem,which leads to an improvement in the quality of CIGS film and a relative increase in conversion efficiency of 29%at a growth rate of about 230 nmmin1,compared with the traditional efficiency in a lowtemperature rapid-deposition process.
基金Project supported by the National Natural Science Foundation of China(Grant No.11547151)
文摘The lowest energies which make Cu,In,Ga,and Se atoms composing Cu（In,Ga）Se_2（CIGS） material displaced from their lattice sites are evaluated,respectively.The non-ionizing energy loss（NIEL） for electron in CIGS material is calculated analytically using the Mott differential cross section.The relation of the introduction rate（k） of the recombination centers to NIEL is modified,then the values of k at different electron energies are calculated.Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers.The validity of the modeling approach is verified by comparison with the experimental data.
文摘In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 10<sup>16</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup> and the defect density less than 10<sup>14</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup>. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe<sub>2</sub> layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm<sup>2</sup> in the current density (<em>J<sub>sc</sub></em>) depending on the absorber thickness is obtained.
基金Project Supported by the Innovation and Technology Fund ( ITF ) of The Government of The Hong Kong Special Administrative Region ( HK-SAR)China( Fund Grant Num ber:S/ P0 0 5 / 99)
文摘In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.
基金supported by the National Natural Science Foundation of China(Nos.11975135 and 61176003)financial support of Special Funds for Fundamental Research Funds for Central Universities(No.2018 NTST29)the Chinese Postdoctoral Science Foundation(No.2019M650524)。
文摘Cu(In,Ga)Se_(2)(CIGS)is a promising candidate to replace crystalline silicon solar cells and dominate the photovoltaic market in the future.Alkali elements such as sodium(Na),potassium(K),rubidium(Rb),and Cesium(Cs)are commonly accepted as indispensable parts to boost cell efficiencies of CIGS thin-film solar cells.Therefore,a comprehensive understanding of alkali effects on the electronic and chemical properties of the CIGS layer as well as the underlying mechanisms is of paramount importance for achieving high-performance solar cells.This paper reviews the development process and incorporation pathways of alkalis and then overviews the roles of different alkali elements and their effects on CIGS cells in detail.Furthermore,the unsolved problems and future development prospects are also proposed.Overall,the understanding and development of widely adopted alkali-fluoride post-deposition treatments(PDTs)are still underway,and together with newly updated research,it will likely enable the CIGS technology to make the conversion efficiency closer to its theoretical limit.
基金The work was supported by the National Key R&D Program of China(No.2018YFB1500200)National Natural Science Foundation of China(Nos.61774089 and 61974076)Natural Science Foundation of Tianjin(No.18JCZDJC31200)。
文摘Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.
