By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal（TM） atoms（from Sc to Zn） adsorbed monolayer Ga As nanosheets...By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal（TM） atoms（from Sc to Zn） adsorbed monolayer Ga As nanosheets（Ga As NSs） are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor（Sc,V,and Fe adsorption）,a half-metal（Mn adsorption）,or a metal（Co and Cu adsorption）.Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11174212)
文摘By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal（TM） atoms（from Sc to Zn） adsorbed monolayer Ga As nanosheets（Ga As NSs） are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor（Sc,V,and Fe adsorption）,a half-metal（Mn adsorption）,or a metal（Co and Cu adsorption）.Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.
