The optical properties of AlGaN-based quantum well(QW)structure with two coupled thin well layers are investigated by the six-by-six K-P method.Compared with the conventional structure,the new structure,especially the...The optical properties of AlGaN-based quantum well(QW)structure with two coupled thin well layers are investigated by the six-by-six K-P method.Compared with the conventional structure,the new structure,especially the one with lower Al-content in the barrier layer,can enhance the TE-/TM-polarized total spontaneous emission rate due to the strong quantum confinement and wide recombination region.For the conventional QW structure,the reduction of well thickness can lead the degree of polarization(DOP)to decrease and the internal quantum efficiency(IQE)to increase.By using the coupled thin well layers,the DOP for the structure with high Al-content in the barrier layer can be improved,while the DOP will further decrease with low Al-content in the barrier layer.It can be attributed to the band adjustment induced by the combination of barrier height and well layer coupling.The IQE can also be further enhanced to 14.8%-20.5%for various Al-content of barrier layer at J=100 A/cm^(2).In addition,the efficiency droop effect can be expected to be suppressed compared with the conventional structure.展开更多
This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and current...This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels.In the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61874168)the Jiangsu Province I-U-R Cooperation Project,China(Grant No.BY2019114)the Nantong Science and Technology Project,China(Grant No.JC2019006)。
文摘The optical properties of AlGaN-based quantum well(QW)structure with two coupled thin well layers are investigated by the six-by-six K-P method.Compared with the conventional structure,the new structure,especially the one with lower Al-content in the barrier layer,can enhance the TE-/TM-polarized total spontaneous emission rate due to the strong quantum confinement and wide recombination region.For the conventional QW structure,the reduction of well thickness can lead the degree of polarization(DOP)to decrease and the internal quantum efficiency(IQE)to increase.By using the coupled thin well layers,the DOP for the structure with high Al-content in the barrier layer can be improved,while the DOP will further decrease with low Al-content in the barrier layer.It can be attributed to the band adjustment induced by the combination of barrier height and well layer coupling.The IQE can also be further enhanced to 14.8%-20.5%for various Al-content of barrier layer at J=100 A/cm^(2).In addition,the efficiency droop effect can be expected to be suppressed compared with the conventional structure.
基金Bundesministerium fur Bildung und Forschung(BMBF)(03ZZ0105A,03ZZ0105B)Bundesministerium fur Wirtschaft und Energie(BMWi)(03EFCBE067)Deutsche Forschungsgemeinschaft(DFG)(CRC 787)
文摘This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based LEDs.By carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels.In the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice.
