Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.

Structural, Optical and Electrical Properties of Ga Doped ZnO/Cu grid/Ga Doped ZnO Transparent Electrodes

Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering for the GZO layers. In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity. The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances. The calculation of both transmittance and sheet resistance of GZO/Cu grid] GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones. The highest figure of merit ФTc is 5.18× 10^-3Ω^-1 for the GZO/Cu grid] GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10 ^-4Ωcm, respectively. The transmittance and resistivity are accentahle for nractical thin film snlar cell annlicatinn~

Highly stable Ga-doped ZnO/polystyrene nanocomposite film with narrow-band cyan emission

In the present study,a simple method for the preparation of a luminescent flexible gallium doped zinc oxide(GZO)/polystyrene nanocomposite film was developed.The prepared GZO powder was characterized through different optical and structural techniques.The XRD study revealed the existence of a wurtzite structure with no extra oxide peaks.Elemental-mapping,EDX,FTIR and XPS analyses were used to confirm the presence of elements and the several groups present in the structure.Under excitations of UV,the prepared hybrid nanocomposite showed a strong cyan emission with narrow full width at half the maximum value(20 nm)that has not been reported before.X-ray and laser-induced luminescence results of the hy-brid film revealed novel blue-green emission at room temperature.The prepared composite film showed a strong scintillation re-sponse to ionizing radiation.The strong emissions,very weak deep-level emissions,and low FWHM of composite indicate the de-sirable optical properties with low-density structural defects in the GZO composite structure.Therefore,the prepared hybrid film can be considered to be a suitable candidate for the fabrication of optoelectronic devices.