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SPS法制备的赝二元合金(Ga_2Te_3)_x-(Bi_(0.5)Sb_(1.5)Te_3)_(1-x)(x=0~0.2)电学性能
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作者 薛海峰 崔教林 修伟杰 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2007年第9期1653-1656,共4页
采用放电等离子烧结(SPS)方法制备了赝二元合金(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0~0.2),并研究其电学性能。结果表明,在318K时(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0.1)合金的电导率为3.7×104Ω-1·m-1,是三元合金Bi0.5Sb1.5Te3的... 采用放电等离子烧结(SPS)方法制备了赝二元合金(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0~0.2),并研究其电学性能。结果表明,在318K时(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0.1)合金的电导率为3.7×104Ω-1·m-1,是三元合金Bi0.5Sb1.5Te3的2倍,而Seebeck系数没有明显下降。从所测得的α和σ值可知,赝二元(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0.1)合金的功率因子最大,为2.1×10-3(W·K-2·m-1),是三元Bi0.5Sb1.5Te3合金的1.5倍。 展开更多
关键词 赝二元合金(ga2Te3)x-(Bi0.5Sb1.5Te3)1-x 放电等离子烧结(SPS) 电学性能
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Microstructural Probing of (1-x) GeS_(2-x)Ga_2S_3 System Glasses By Raman Scattering 被引量:4
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作者 陶海征 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2005年第3期8-10,共3页
Roman scattering measurement of ( 1 - x ) GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with t... Roman scattering measurement of ( 1 - x ) GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with the addition of Ga2S3, two main structural transformations were deduced : the gradual enhancement of ethane- like structural units S3 Ge- GeS3 ( 250 cm ^- 1) and S3 Ga- GaS3 (270 cm ^- 1 ) and the appearance of charge imbalanced units [ Ga2 S2 ( S1/2 )4 ]^2- and [Ga( S1/2 )4 ]^- . And this change of structural aspect seems to give as a clue to understanding the cause of the increased rare-earth solubility. 展开更多
关键词 1 - x GeS2-x ga2S3 system glasses Raman microstructure
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Effect of Substitution Sr Cations on the Structure in the Gd_(1)(Ba_(2−x)Sr_(x))Cu_(3)O_(7−δ) Phases
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作者 Made Sumadiyasa Nyoman Wendri +1 位作者 Putu Suardana Ni Nyoman Rupiasih 《Journal of Materials Science and Chemical Engineering》 2020年第1期44-53,共10页
In an effort to improve the performance of superconductors in the field and high temperatures it is important to study the superconducting mechanism. For this reason, the cation substitution can be conducted. One of t... In an effort to improve the performance of superconductors in the field and high temperatures it is important to study the superconducting mechanism. For this reason, the cation substitution can be conducted. One of the high Tc superconductors Gd1Ba2Cu3O7&minus;δ phase with Sr substitution has been synthesized, i.e. Gd1(Ba2&minus;xSrx)Cu3O7&minus;δ compound. The sample was synthesized by using a solid-state reaction method with a wet mixing, sintered for 12 hours at temperature 900°C. The synthesis results are characterized by using XRD. The results of Match-3 software analysis showed high (higher 85%) Gd1Ba2Cu3O7&minus;δ phase was formed. The Sr substitution causes changes to the structure, i.e. the lattice parameters a, b and c, where the orthorhombicity tends to decrease with increasing Sr content. Refinement results show that based on the oxygen occupancy, the total oxygen content tends to increase. 展开更多
关键词 Wet Mixing Gd_(1)(Ba_(2-x)Sr_(x))Cu_(3)O_(7-δ) compound Sr Substitution Lattice Parameters Orthorhombicity
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氧空位对Ga_(1.5)In_(0.5)O_3透明导电氧化物性能的影响 被引量:2
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作者 赵银女 《材料科学与工程学报》 CAS CSCD 北大核心 2015年第3期396-400,共5页
Ga1.5In0.5O3是一种潜在的紫外透明导电材料。用第一性原理计算了含氧空位的Ga1.5In0.5O3的结构参数、生成焓、能带结构、态密度、光吸收和光反射。氧空位的位置影响Ga1.5In0.5O3化合物的晶格常数和生成焓,含氧空位的Ga1.5In0.5O3是间... Ga1.5In0.5O3是一种潜在的紫外透明导电材料。用第一性原理计算了含氧空位的Ga1.5In0.5O3的结构参数、生成焓、能带结构、态密度、光吸收和光反射。氧空位的位置影响Ga1.5In0.5O3化合物的晶格常数和生成焓,含氧空位的Ga1.5In0.5O3是间接带隙半导体,其带隙宽度较本征Ga1.5In0.5O3带隙值变宽。氧空位VO(1)、VO(2)和VO(3)在Ga1.5In0.5O3中分别引入0.237eV、0.239eV和1.384eV的施主杂质能级,在吸收光谱中出现杂质吸收现象。氧空位降低Ga1.5In0.5O3吸收主峰和反射主峰的强度,在近红外区含VO(1)和VO(2)的Ga1.5In0.5O3的吸收系数和反射率较大,含VO(3)的Ga1.5In0.5O3的吸收系数和反射率较小。 展开更多
关键词 ga2(1-x)in2xo3化合物 氧空位 电子结构 第一性原理
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Electronic structure and optical properties of Sn_(2x)Ga_(2(1-x))O_3 compounds 被引量:3
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作者 YAN JinLiang ZHANG YiJun 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2011年第3期459-464,共6页
Band structure, density of states, electron density difference, and optical properties of intrinsic β-Ga2O3 and Sn2xGa2(1-x)O3 (x= 3.125%-6.25%) compounds are studied using first-principle calculations based on the d... Band structure, density of states, electron density difference, and optical properties of intrinsic β-Ga2O3 and Sn2xGa2(1-x)O3 (x= 3.125%-6.25%) compounds are studied using first-principle calculations based on the density functional theory. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of band-to-band transitions. All the calculation results indicate that the conductivity of Sn2xGa2(1-x)O3 is super to β-Ga2O3, and the calculated results consist with experiments that have been reported. 展开更多
关键词 electronic structure optical properties β-ga2O3 Sn2xga2(1-x)O3 compounds
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金属有机物化学气相沉积法生长Ga_(2(1-x))In_(2x)O_3薄膜的结构及光电性能研究
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作者 杨帆 马瑾 +2 位作者 孔令沂 栾彩娜 朱振 《物理学报》 SCIE EI CAS CSCD 北大核心 2009年第10期7079-7082,共4页
采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-x)In2xO3(x=0.1—0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分x=0.2时,样品为单斜β-Ga2O3结构;x=0.5的样... 采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-x)In2xO3(x=0.1—0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分x=0.2时,样品为单斜β-Ga2O3结构;x=0.5的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善,由非晶结构转变为具有(222)单一取向的立方In2O3结构;对于x=0.8,薄膜为立方In2O3结构,退火后薄膜的晶体质量得到提高.在可见光区薄膜本身的透过率均达到了85%以上,带隙宽度随样品中Ga含量的改变在3.76—4.43eV之间变化,且经退火处理后带隙宽度明显增大. 展开更多
关键词 金属有机物化学气相沉积 ga2(1-x)in2xo3薄膜 蓝宝石衬底 退火
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