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Growth of β-Ga_2O_3 Films on Sapphire by Hydride Vapor Phase Epitaxy 被引量:3
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作者 Ze-Ning XIONG Xiang-Qian XIU +7 位作者 Yue-Wen LI Xue-Mei HUA Zi-Li XIE Peng CHEN Bin LIU Ping HAN Rong ZHANG You-Dou ZHENG 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期141-143,共3页
Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a hig... Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V. 展开更多
关键词 Growth of ga2o3 Films on Sapphire by Hydride vapor Phase Epitaxy XRD
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A Ga_2O·11Al_2O_3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires
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作者 WANG Yu WEN Wen WU Kai 《Science China Chemistry》 SCIE EI CAS 2010年第2期438-444,共7页
A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of... A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O·11Al2O3 nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C. The reaction mechanisms were investigated. 展开更多
关键词 AAO template ga2o vapor ga2o·11Al2O3 nanonet GaN nanowire interfacial reaction growth
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