We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit process...We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.展开更多
The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse wi...The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0 8mJ and the pulse width of 5ns,and operated at biased electric field of 2 0 and 6 0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9 5kV/cm,and the triggered laser is in range of 0 5～1 0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti site defects of semi insulating GaAs and two step single photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.展开更多
文摘We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.
文摘The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0 8mJ and the pulse width of 5ns,and operated at biased electric field of 2 0 and 6 0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9 5kV/cm,and the triggered laser is in range of 0 5～1 0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti site defects of semi insulating GaAs and two step single photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.
