This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a ...This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.展开更多
A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B wi...A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B with a minimum saturated output power（Psat） of 14.2 d Bm from 77 to 100 GHz. The typical Psat is better by 16.3 d Bm with a flatness of 0.4 d B and the maximum power added efficiency is 6% between 77 and92 GHz. This result shows that the amplifier delivers output power density of about 470 m W/mm with a total gate output periphery of 100 m. As far as we know, it is nearly the best power density performance ever published from a single ended Ga As-based PHEMT MMIC at this frequency band.展开更多
A novel symmetrical microwave power sensor based on MEMS technology is presented. In this power sensor, the left section inputs the microwave power, while the fight section inputs the DC power. Because of its symmetri...A novel symmetrical microwave power sensor based on MEMS technology is presented. In this power sensor, the left section inputs the microwave power, while the fight section inputs the DC power. Because of its symmetrical structure, this power sensor provides more accurate microwave power measurement capability without mismatch uncertainty and temperature drift. The loss caused by the microwave signal is simulated in this power sensor. This power sensor is designed and fabricated using GaAs MMIC technology. And it is measured in the frequency range up to 20 GHz with an input power in the 0-80 mW range. Over the 80 mW dynamic range, the sensitivity can achieve about 0.2 mV/mW. The difference between the input power in the two sections is below 0.1% for an equal output voltage. In short, the key aspect of this power sensor is that the microwave power measurement is replaced with a DC power measurement.展开更多
A wideband 8-12 GHz inline type microwave power sensor, which has both working and non-working states, is presented. The power sensor measures the microwave power coupled from a CPW line by a MEMS membrane. In order t...A wideband 8-12 GHz inline type microwave power sensor, which has both working and non-working states, is presented. The power sensor measures the microwave power coupled from a CPW line by a MEMS membrane. In order to reduce microwave losses during the non-working state, a new structure of working state transfer switches is proposed to realize the two working states. The fabrication of the power sensor with two working states is compatible with the GaAs MMIC （monolithic microwave integrated circuit） process. The experimental results show that the power sensor has an insertion loss of 0.18 dB during the non-working state and 0.24 dB during the working state at a frequency of 10 GHz. This means that no microwave power has been coupled from the CPW line during the non-working state.展开更多
基金supported by the National Natural Science Foundation of China(No.60676043)the National High Technology Research and Development Program of China(No.2007AA04Z328)
文摘This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.
文摘A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B with a minimum saturated output power（Psat） of 14.2 d Bm from 77 to 100 GHz. The typical Psat is better by 16.3 d Bm with a flatness of 0.4 d B and the maximum power added efficiency is 6% between 77 and92 GHz. This result shows that the amplifier delivers output power density of about 470 m W/mm with a total gate output periphery of 100 m. As far as we know, it is nearly the best power density performance ever published from a single ended Ga As-based PHEMT MMIC at this frequency band.
基金supported by the National Natural Science Foundation of China(No.60676043)the National High Technology Research and Development Program of China(No.2007AA04Z328)
文摘A novel symmetrical microwave power sensor based on MEMS technology is presented. In this power sensor, the left section inputs the microwave power, while the fight section inputs the DC power. Because of its symmetrical structure, this power sensor provides more accurate microwave power measurement capability without mismatch uncertainty and temperature drift. The loss caused by the microwave signal is simulated in this power sensor. This power sensor is designed and fabricated using GaAs MMIC technology. And it is measured in the frequency range up to 20 GHz with an input power in the 0-80 mW range. Over the 80 mW dynamic range, the sensitivity can achieve about 0.2 mV/mW. The difference between the input power in the two sections is below 0.1% for an equal output voltage. In short, the key aspect of this power sensor is that the microwave power measurement is replaced with a DC power measurement.
基金Project supported by the National Natural Science Foundation of China(No.60676043)the National High Technology Research and Development Program of China(No.2007AA04Z328).
文摘A wideband 8-12 GHz inline type microwave power sensor, which has both working and non-working states, is presented. The power sensor measures the microwave power coupled from a CPW line by a MEMS membrane. In order to reduce microwave losses during the non-working state, a new structure of working state transfer switches is proposed to realize the two working states. The fabrication of the power sensor with two working states is compatible with the GaAs MMIC （monolithic microwave integrated circuit） process. The experimental results show that the power sensor has an insertion loss of 0.18 dB during the non-working state and 0.24 dB during the working state at a frequency of 10 GHz. This means that no microwave power has been coupled from the CPW line during the non-working state.
