基于InGaP/GaAs异质结双极晶体管（HBT）工艺设计了一款X波段低相噪单片集成压控振荡器（VCO）,该VCO采用Colpitts双推（push-push）电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸...基于InGaP/GaAs异质结双极晶体管（HBT）工艺设计了一款X波段低相噪单片集成压控振荡器（VCO）,该VCO采用Colpitts双推（push-push）电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸以降低其引入的1/f噪声,同时设计高Q值分布式谐振电路,从而有效降低了VCO的输出相位噪声。通过采用背靠背变容二极管对来增加VCO输出频率调谐带宽。测试结果表明,所设计芯片在5 V供电时的电流约180 m A,电调电压在1-13 V变化下输出频率覆盖8.8-10 GHz,典型输出功率为10 d Bm,单边带相位噪声为-115 d Bc/Hz@100 k Hz。芯片尺寸为2.5 mm×1.6 mm。展开更多
The design and test results of a 6-bit 3-Gsps analog-to-digital converter （ADC） using 1 μm GaAs het- erojunction bipolar transistor （HBT） technology are presented. The monolithic folding-interpolating ADC makes u...The design and test results of a 6-bit 3-Gsps analog-to-digital converter （ADC） using 1 μm GaAs het- erojunction bipolar transistor （HBT） technology are presented. The monolithic folding-interpolating ADC makes use of a track-and-hold amplifier （THA） with a highly linear input buffer to maintain a highly effective number of bits （ENOB）. The ADC occupies an area of 4.32 × 3.66 mm2 and achieves 5.53 ENOB with an effective resolution bandwidth of 1.l GHz at a sampling rate of 3 Gsps. The maximum DNL and INL are 0.36 LSB and 0.48 LSB, respectively.展开更多
A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitt...A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.展开更多
A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead o...A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.展开更多
A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates in...A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.展开更多
An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration o...An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.展开更多
This paper presents a 10-GHz 8-bit direct digital synthesizer（DDS） microwave monolithic integrated circuit implemented in 1μm GaAs HBT technology.The DDS takes a double-edge-trigger（DET） 8-stage pipeline accumula...This paper presents a 10-GHz 8-bit direct digital synthesizer（DDS） microwave monolithic integrated circuit implemented in 1μm GaAs HBT technology.The DDS takes a double-edge-trigger（DET） 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture,which can maximize the utilization ratio of the GaAs HBT＇s high-speed potential.With an output frequency up to 5 GHz,the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band,and consumes 2.4 W of DC power from a single-4.6 VDC supply.Using 1651 GaAs HBT transistors,the total area of the DDS chip is 2.4×2.0 mm^2.展开更多
A 6 GHz voltage controlled oscillator （VCO） optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance （Neg-R） method, utilizing an InGaP/GaAs hete...A 6 GHz voltage controlled oscillator （VCO） optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance （Neg-R） method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of-122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.展开更多
Design and fabrication of a Ka-band voltage-controlled oscillator（VCO） using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configurat...Design and fabrication of a Ka-band voltage-controlled oscillator（VCO） using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employed to reduce the phase noise of the VCO,and a novel π-feedback network is applied to compensate for the 180° phase shift.The on-wafer test shows that the VCO exhibits a phase noise of-96.47 dBc/Hz at a 1 MHz offset and presents a tuning range from 28.312 to 28.695 GHz.The overall dc current consumption of the VCO is 18 mA with a supply voltage of-6 V.The chip area of the VCO is 0.7×0.7 mm^2.展开更多
A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with vario...A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications,which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and ＋80℃.展开更多
文摘基于InGaP/GaAs异质结双极晶体管（HBT）工艺设计了一款X波段低相噪单片集成压控振荡器（VCO）,该VCO采用Colpitts双推（push-push）电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸以降低其引入的1/f噪声,同时设计高Q值分布式谐振电路,从而有效降低了VCO的输出相位噪声。通过采用背靠背变容二极管对来增加VCO输出频率调谐带宽。测试结果表明,所设计芯片在5 V供电时的电流约180 m A,电调电压在1-13 V变化下输出频率覆盖8.8-10 GHz,典型输出功率为10 d Bm,单边带相位噪声为-115 d Bc/Hz@100 k Hz。芯片尺寸为2.5 mm×1.6 mm。
基金Project supported by the National Basic Research Program of China(No.2010CB327505)the Advance Research Project of China(No.51308xxxx06)the Advance Research Foundation of China(No.9140A08xxxx11DZ111)
文摘The design and test results of a 6-bit 3-Gsps analog-to-digital converter （ADC） using 1 μm GaAs het- erojunction bipolar transistor （HBT） technology are presented. The monolithic folding-interpolating ADC makes use of a track-and-hold amplifier （THA） with a highly linear input buffer to maintain a highly effective number of bits （ENOB）. The ADC occupies an area of 4.32 × 3.66 mm2 and achieves 5.53 ENOB with an effective resolution bandwidth of 1.l GHz at a sampling rate of 3 Gsps. The maximum DNL and INL are 0.36 LSB and 0.48 LSB, respectively.
基金Project supported by the National Basic Research Program of China(No.2010CBxxxx05)the Advance Research Project of China(No.51308xxxx06)+2 种基金the Advance Research Foundation of China(No.9140A08xxxx11DZ111)Doctoral Scientific Research Foundation of Henan University of Science and Technology(No.400613480011)the Foundation of He’nan Educational Commettee(No.15A510001)
文摘A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
基金supported by the National Basic Research Program of China(No.2010CBxxxx05)the Advance Research Project of China(No.51308xxxx06)the Advance Research Foundation of China(No.9140A08xxxx11DZ111)
文摘A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.
文摘A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.
文摘An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.
基金Project supported by the State Key Development for Basic Research Program of China(No.2010CB327505).
文摘This paper presents a 10-GHz 8-bit direct digital synthesizer（DDS） microwave monolithic integrated circuit implemented in 1μm GaAs HBT technology.The DDS takes a double-edge-trigger（DET） 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture,which can maximize the utilization ratio of the GaAs HBT＇s high-speed potential.With an output frequency up to 5 GHz,the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band,and consumes 2.4 W of DC power from a single-4.6 VDC supply.Using 1651 GaAs HBT transistors,the total area of the DDS chip is 2.4×2.0 mm^2.
文摘A 6 GHz voltage controlled oscillator （VCO） optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance （Neg-R） method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of-122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.
基金Project supported by the National Key Basic Research Program of China(No.2010CB327505)the Advanced Research Project(No.51308xxxx06)the Advanced Research Foundation(No.9140A08xxxx11DZ111)
文摘Design and fabrication of a Ka-band voltage-controlled oscillator（VCO） using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employed to reduce the phase noise of the VCO,and a novel π-feedback network is applied to compensate for the 180° phase shift.The on-wafer test shows that the VCO exhibits a phase noise of-96.47 dBc/Hz at a 1 MHz offset and presents a tuning range from 28.312 to 28.695 GHz.The overall dc current consumption of the VCO is 18 mA with a supply voltage of-6 V.The chip area of the VCO is 0.7×0.7 mm^2.
基金Project supported by the Breakthroughs in Key Areas of Guangdong and Hong Kong Project(No.2008A010100012)
文摘A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications,which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and ＋80℃.
