A GaAs metal-oxide-semiconductor （MOS） capacitor with HfO2 as gate dielectric and silicon nitride （SiNx） as the interlayer （IL） is fabricated. Experimental results show that the sample with the SiNx IL has an im...A GaAs metal-oxide-semiconductor （MOS） capacitor with HfO2 as gate dielectric and silicon nitride （SiNx） as the interlayer （IL） is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density （0.785 × 10^-6 Alcm^2 at Vfo ＋ 1 V） and lower interface-state density （2.9 × 10^12 eV^-1 ·cm^-2） compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.展开更多
The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared...The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap （1.17×10^12 cm^-2eV^-1） and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of Hf-TiON/ZnON plus NH3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 61176100)
文摘A GaAs metal-oxide-semiconductor （MOS） capacitor with HfO2 as gate dielectric and silicon nitride （SiNx） as the interlayer （IL） is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density （0.785 × 10^-6 Alcm^2 at Vfo ＋ 1 V） and lower interface-state density （2.9 × 10^12 eV^-1 ·cm^-2） compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.
基金supported by the National Natural Science Foundation of China(Nos.61176100,61274112,61404055)
文摘The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap （1.17×10^12 cm^-2eV^-1） and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of Hf-TiON/ZnON plus NH3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.
