A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B wi...A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B with a minimum saturated output power（Psat） of 14.2 d Bm from 77 to 100 GHz. The typical Psat is better by 16.3 d Bm with a flatness of 0.4 d B and the maximum power added efficiency is 6% between 77 and92 GHz. This result shows that the amplifier delivers output power density of about 470 m W/mm with a total gate output periphery of 100 m. As far as we know, it is nearly the best power density performance ever published from a single ended Ga As-based PHEMT MMIC at this frequency band.展开更多
文摘A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 m Ga As pseudomorphic HEMT（PHEMT） technology, demonstrated a flat small signal gain of12.4±2 d B with a minimum saturated output power（Psat） of 14.2 d Bm from 77 to 100 GHz. The typical Psat is better by 16.3 d Bm with a flatness of 0.4 d B and the maximum power added efficiency is 6% between 77 and92 GHz. This result shows that the amplifier delivers output power density of about 470 m W/mm with a total gate output periphery of 100 m. As far as we know, it is nearly the best power density performance ever published from a single ended Ga As-based PHEMT MMIC at this frequency band.
