Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the...Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.展开更多
Electrolyte electroreflectance (EER) has been widely employed to investigate the electronic energy band structure and related physical properties of semiconductors. The electrolyte electroreflectance (EER) method comb...Electrolyte electroreflectance (EER) has been widely employed to investigate the electronic energy band structure and related physical properties of semiconductors. The electrolyte electroreflectance (EER) method combined with electrochemical anodic dissolution was used to study GaAs/GaAlAs multilayer structural materials. According to variation of the EER spectra during anodic dissolution the characteristics of GaAs/GaAlAs multilayer structural materials such as properties of the interface, p-n junction positions and Al content profiles were obtained.展开更多
文摘Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.
文摘Electrolyte electroreflectance (EER) has been widely employed to investigate the electronic energy band structure and related physical properties of semiconductors. The electrolyte electroreflectance (EER) method combined with electrochemical anodic dissolution was used to study GaAs/GaAlAs multilayer structural materials. According to variation of the EER spectra during anodic dissolution the characteristics of GaAs/GaAlAs multilayer structural materials such as properties of the interface, p-n junction positions and Al content profiles were obtained.
