This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm ...This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.展开更多
An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is pr...An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is proposed for extraction of accessresistance and parasiticinductance. This method differs from previous ones by extracting the c-quivalent circuit parameterswithout using special test structure or global numerical optimization techniques. The mainadvantage of this method is that a unique and physically meaningful set of intrinsic parameters isextracted from impedance and admittance representation of the measured S-pa-rameters in thefrequency range of 1-12 GHz under different bias conditions. The method yields a deviation of lessthan 5% between measured and modeled S-parameters.展开更多
Agilent模型的等效电路可以较好地表征器件的物理特性,但是其中的直流和交流表达式较为复杂,鉴于此,文中在Agilent HBT模型等效电路的基础上,利用符号自定义(SDD)技术,提出了一种简单且精确的经验模型。该模型直流部分采用VBIC模型中的...Agilent模型的等效电路可以较好地表征器件的物理特性,但是其中的直流和交流表达式较为复杂,鉴于此,文中在Agilent HBT模型等效电路的基础上,利用符号自定义(SDD)技术,提出了一种简单且精确的经验模型。该模型直流部分采用VBIC模型中的直流表达式,交流部分采用经验表达式,使得模型得以简化,参数提取难度大大降低。采用1μm Ga As HBT器件,对本文所提出的经验的Ga As HBT器件模型进行验证。在对模型的参数进行完整提取的基础上,通过将Agilent HBT模型和所提出的经验模型的仿真结果与测试结果相对比,验证了所提出的经验模型的精确性。展开更多
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external p...A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.展开更多
We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in com- mercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transcondu...We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in com- mercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transconductance compression/tail-off behaviors. The main advantage of this model is to provide a simple and coherent description of the bias-dependent drain current （Ⅰ-V） that is valid in all regions of operation. All aspects of the model are validated for 0.25μm gate-length GaAs and GaN HEMT processes. The simulation results of DC/pulsed Ⅰ-V, RF large-signal power and intermodulation distortion products show excellent agreement with the measured data.展开更多
文摘This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.
基金Supported by the National Natural Science Foun dation of China(60444004) and the AM Foundation of Shanghai Mu nicipal Science and Technology Commission of China (0109)
文摘An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is proposed for extraction of accessresistance and parasiticinductance. This method differs from previous ones by extracting the c-quivalent circuit parameterswithout using special test structure or global numerical optimization techniques. The mainadvantage of this method is that a unique and physically meaningful set of intrinsic parameters isextracted from impedance and admittance representation of the measured S-pa-rameters in thefrequency range of 1-12 GHz under different bias conditions. The method yields a deviation of lessthan 5% between measured and modeled S-parameters.
文摘Agilent模型的等效电路可以较好地表征器件的物理特性,但是其中的直流和交流表达式较为复杂,鉴于此,文中在Agilent HBT模型等效电路的基础上,利用符号自定义(SDD)技术,提出了一种简单且精确的经验模型。该模型直流部分采用VBIC模型中的直流表达式,交流部分采用经验表达式,使得模型得以简化,参数提取难度大大降低。采用1μm Ga As HBT器件,对本文所提出的经验的Ga As HBT器件模型进行验证。在对模型的参数进行完整提取的基础上,通过将Agilent HBT模型和所提出的经验模型的仿真结果与测试结果相对比,验证了所提出的经验模型的精确性。
基金Project supported by the National Natural Science Foundation of China(No.60806024)
文摘A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.
文摘We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use in com- mercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transconductance compression/tail-off behaviors. The main advantage of this model is to provide a simple and coherent description of the bias-dependent drain current （Ⅰ-V） that is valid in all regions of operation. All aspects of the model are validated for 0.25μm gate-length GaAs and GaN HEMT processes. The simulation results of DC/pulsed Ⅰ-V, RF large-signal power and intermodulation distortion products show excellent agreement with the measured data.
