The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to re...The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved. RTA was carried out at 650℃ and its effect was studied by the comparising the room\|temperature PhotoLuminescence (PL) spectra for the non ion removed (grown without magnets) sample with for the ion removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion removed GaInNAs/GaAs SQW after annealing (compared with those for ion removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ion removed GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect assisted In Ga interdiffusion rather than defect assisted N As interdiffusion.展开更多
We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the...We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.展开更多
GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significan...GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.展开更多
采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件...采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件进行隔离 .在零偏压下 ,器件最大的量子效率为 1 2 %,半峰值全宽 (FWHM)为 5 .8nm,3 d B带宽为 3 0 MHz,暗电流为 2× 1 0 - 11A.通过对 MBE生长条件和器件结构的优化 ,将进一步提高该器件的性能 .展开更多
基金Project Supported by Major State Basic Research Program Under Grant No.G2 0 0 0 0 3 660 3 and by National NaturalScience Found
文摘The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved. RTA was carried out at 650℃ and its effect was studied by the comparising the room\|temperature PhotoLuminescence (PL) spectra for the non ion removed (grown without magnets) sample with for the ion removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion removed GaInNAs/GaAs SQW after annealing (compared with those for ion removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ion removed GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect assisted In Ga interdiffusion rather than defect assisted N As interdiffusion.
文摘We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.
基金Supported by the Major State Basic Research Program under Grant No.G2000036603the National Natural Science Foundation of China under Grant Nos.69896260 and 69988005.
文摘GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.
基金Major State Basic Research Program under Grant No.G2 0 0 0 0 36 6 0 3theNational Natural Science Foundation of China under Grant Nos.6 9896 2 6 0 +1 种基金6 99880 0 5 6 9976 0 0 7and6 978980 2
文摘采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件进行隔离 .在零偏压下 ,器件最大的量子效率为 1 2 %,半峰值全宽 (FWHM)为 5 .8nm,3 d B带宽为 3 0 MHz,暗电流为 2× 1 0 - 11A.通过对 MBE生长条件和器件结构的优化 ,将进一步提高该器件的性能 .
