本文制做了 6 70 nm Ga In P/ Al Ga In P应变层单量子阱脊形波导激光器。为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30～ 5 0 nm的 Ga In P蚀刻阻挡层。用此种材料加工而成的腔长12 0 0 μm、宽 6 4μm的氧化条激光...本文制做了 6 70 nm Ga In P/ Al Ga In P应变层单量子阱脊形波导激光器。为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30～ 5 0 nm的 Ga In P蚀刻阻挡层。用此种材料加工而成的腔长12 0 0 μm、宽 6 4μm的氧化条激光器的阈值电流密度为 340 A/ cm2。采用配比为 1.0∶ 2 .5的 HCl∶H2 O溶液对 Ga In P/ Al Ga In P进行湿蚀刻研究 。展开更多
The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measurin...The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.展开更多
In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by met...In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.展开更多
文摘本文制做了 6 70 nm Ga In P/ Al Ga In P应变层单量子阱脊形波导激光器。为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30～ 5 0 nm的 Ga In P蚀刻阻挡层。用此种材料加工而成的腔长12 0 0 μm、宽 6 4μm的氧化条激光器的阈值电流密度为 340 A/ cm2。采用配比为 1.0∶ 2 .5的 HCl∶H2 O溶液对 Ga In P/ Al Ga In P进行湿蚀刻研究 。
文摘The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.
基金supported by the National Natural Science Foundation of China (No.50472068)the Program for New Century Excellent Talents in University
文摘In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.
