Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons ...Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.展开更多
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance deg...GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in Isc, Voc, Pmax and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of Isc, Voc and Pmax are larger compared with 50 keV proton irradiation.展开更多
The radiation damage of three individual subcells for GalnP/GaAs//Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence （PL） measurements. The PL spectra of eac...The radiation damage of three individual subcells for GalnP/GaAs//Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence （PL） measurements. The PL spectra of each subcell are obtained using different excitation lasers. The PL intensity has a fast degradation after irradiation, and decreases as the displacement damage dose increases. Furthermore, the normalized PL intensity varying with the displacement damage dose is analyzed in detail, and then the lifetime damage coefficients of the recombination centers for GaInP top-cell, GaAs mid-cell and Ge bottom-cell of the triple-junction solar cells are determined from the PL radiative efficiency.展开更多
Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which a...Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of i ~ 1015 cm-2. Minority-carrier injection under forward bias is observed to enhance the defect annealing in the GaAs middle cell, and the removal rate of the defect is determined with photoluminescenee radiative efficiency recovery. Furthermore, the injection-enhanced defect removal rates obey a simple Arrhenius law. Therefore, the annealing activation energy is acquired and is equal to 0.58eV. Finally, in comparison of the annealing activation energies, the E5 defect is identified as a primary non-radiative recombination center.展开更多
The AR coatings for GaInP/GaAs tandem solar cell are simulated.Results show that,under the condition of the lack of suitable encapsulation, a very low energy loss could be reached on MgF2/ZnS system; in the case of gl...The AR coatings for GaInP/GaAs tandem solar cell are simulated.Results show that,under the condition of the lack of suitable encapsulation, a very low energy loss could be reached on MgF2/ZnS system; in the case of glass encapsulation,the Al2O3/ZrO2 and Al2O3/TiO2 systems are appropriate choice; for AlInP window layer,the thickness of 30 nm is suitable.展开更多
应用PC1D程序拟合1 Me V电子辐照后Ga In P/Ga As/Ge太阳电池的光谱响应得到少数载流子扩散长度随辐照电子注量的变化关系.结果表明:少数载流子(少子)扩散长度随辐照电子注量增加而减小,少数载流子扩散长度的缩短是太阳电池短路电流退...应用PC1D程序拟合1 Me V电子辐照后Ga In P/Ga As/Ge太阳电池的光谱响应得到少数载流子扩散长度随辐照电子注量的变化关系.结果表明:少数载流子(少子)扩散长度随辐照电子注量增加而减小,少数载流子扩散长度的缩短是太阳电池短路电流退化的主要原因.展开更多
We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the...We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11675020,11375028,11075018 and 10675023
文摘Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.
基金supported by National Natural Science Foundation of China(Nos.10675023,11075018)the Fundamental Research Funds for the Central Universities of China
文摘GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in Isc, Voc, Pmax and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of Isc, Voc and Pmax are larger compared with 50 keV proton irradiation.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10675023,11075018,11375028 and 11675020the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20120003110011
文摘The radiation damage of three individual subcells for GalnP/GaAs//Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence （PL） measurements. The PL spectra of each subcell are obtained using different excitation lasers. The PL intensity has a fast degradation after irradiation, and decreases as the displacement damage dose increases. Furthermore, the normalized PL intensity varying with the displacement damage dose is analyzed in detail, and then the lifetime damage coefficients of the recombination centers for GaInP top-cell, GaAs mid-cell and Ge bottom-cell of the triple-junction solar cells are determined from the PL radiative efficiency.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10675023,11075018 and 11375028the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20120003110011
文摘Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of i ~ 1015 cm-2. Minority-carrier injection under forward bias is observed to enhance the defect annealing in the GaAs middle cell, and the removal rate of the defect is determined with photoluminescenee radiative efficiency recovery. Furthermore, the injection-enhanced defect removal rates obey a simple Arrhenius law. Therefore, the annealing activation energy is acquired and is equal to 0.58eV. Finally, in comparison of the annealing activation energies, the E5 defect is identified as a primary non-radiative recombination center.
文摘The AR coatings for GaInP/GaAs tandem solar cell are simulated.Results show that,under the condition of the lack of suitable encapsulation, a very low energy loss could be reached on MgF2/ZnS system; in the case of glass encapsulation,the Al2O3/ZrO2 and Al2O3/TiO2 systems are appropriate choice; for AlInP window layer,the thickness of 30 nm is suitable.
文摘We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.
