Metal organic chenlical vapor deposition （AIOCVD） growth systems arc one of the. main types of equipment used for growing single crystal materials, such as GaN. To obtain fihn epitaxial materials with uniform perfor...Metal organic chenlical vapor deposition （AIOCVD） growth systems arc one of the. main types of equipment used for growing single crystal materials, such as GaN. To obtain fihn epitaxial materials with uniform performanee, the flow field and ternperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to stud,v the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding~ significance for the growth of GaN fihn materials.展开更多
To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational ...To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics （CFD） and molecular dynamics （MD） simulations. Both of the simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.展开更多
As a Group III–V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin...As a Group III–V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas’ thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth.展开更多
为了获得满足高品质硅单晶体生长的工艺参数,一种计算流体动力学(computational fluid dynamics,CFD)方法、数据处理组合法(group method of data handing,GMDH)型神经网络和第二代非支配排序遗传算法II(nondominated sorting genetic a...为了获得满足高品质硅单晶体生长的工艺参数,一种计算流体动力学(computational fluid dynamics,CFD)方法、数据处理组合法(group method of data handing,GMDH)型神经网络和第二代非支配排序遗传算法II(nondominated sorting genetic algorithm II,NSGA-II)的混合策略被提出,并对Czochralski(Cz)法硅单晶生长进行建模和工艺参数的多目标优化。将包含了加热温度、晶转速度、埚转速度和提拉速度等四个设计变量的固液界面形变量h和缺陷评价准则V/G作为目标函数。通过CFD进行数值计算,获得GMDH训练所需要的样本,并建立目标函数多项式模型,最后利用NSGA-II得到满足了Pareto最优解的工艺参数。通过实际工程验证,证明了所提出的混合策略为获取晶体生长工艺参数提供了一种新的数值计算方法。展开更多
This research discusses the separation of methane gas from three different gas mixtures,CH4/H2 S,CH4/N2 and CH4/CO2,using a modified silicon carbide nanosheet(Si CNS)membrane using both molecular dynamics(MD)and compu...This research discusses the separation of methane gas from three different gas mixtures,CH4/H2 S,CH4/N2 and CH4/CO2,using a modified silicon carbide nanosheet(Si CNS)membrane using both molecular dynamics(MD)and computational fluid dynamics(CFD)methods.The research examines the effects of different structures of the Si CNSs on the separation of these gas mixtures.Various parameters including the potential of the mean force,separation factor,permeation rate,selectivity and diffusivity are discussed in detail.Our MD simulations showed that the separation of CH4/H2 S,and CH4/CO2 mixtures was successful,while simulation demonstrated a poor result for the CH4/N2 mixture.The effect of temperature on the diffusivity of gas is also discussed,and a correlation is introduced for diffusivity as a function of temperature.The evaluated value for diffusivity is then used in the CFD method to investigate the permeation rate of gas mixtures.展开更多
基金Supported by the National Key R&D Program of China under Grant No 2016YFB0400104
文摘Metal organic chenlical vapor deposition （AIOCVD） growth systems arc one of the. main types of equipment used for growing single crystal materials, such as GaN. To obtain fihn epitaxial materials with uniform performanee, the flow field and ternperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to stud,v the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding~ significance for the growth of GaN fihn materials.
基金Project supported by the National Basic Research Program of China (Grant No. 2011CB301900)the National High Technology Research and DevelopmentProgram of China (Grant No. 2011AA03A103)+1 种基金the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and60936004)the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178)
文摘To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics （CFD） and molecular dynamics （MD） simulations. Both of the simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.
基金supported by the National Natural Science Foundation of China (Grant No. 60706014)the National Science Fund for Distinguished Young Scholars (Grant No. 60625302)+2 种基金the National Natural Science Foundation of China (General Program) (Grant No. 2009CB320603)the National High-Tech Research and Development Program of China (Grant No. 2009AA04Z159)the Shanghai Leading Academic Discipline Project (Grant No. B504)
文摘As a Group III–V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas’ thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth.
文摘This research discusses the separation of methane gas from three different gas mixtures,CH4/H2 S,CH4/N2 and CH4/CO2,using a modified silicon carbide nanosheet(Si CNS)membrane using both molecular dynamics(MD)and computational fluid dynamics(CFD)methods.The research examines the effects of different structures of the Si CNSs on the separation of these gas mixtures.Various parameters including the potential of the mean force,separation factor,permeation rate,selectivity and diffusivity are discussed in detail.Our MD simulations showed that the separation of CH4/H2 S,and CH4/CO2 mixtures was successful,while simulation demonstrated a poor result for the CH4/N2 mixture.The effect of temperature on the diffusivity of gas is also discussed,and a correlation is introduced for diffusivity as a function of temperature.The evaluated value for diffusivity is then used in the CFD method to investigate the permeation rate of gas mixtures.
