The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures,and the impurity-related deep energy level behavior will have a significant impact on device performance.However,a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures.We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence(CL)mapping.We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals.The lateral growth sector,i.e.,the{101¯1}-growth sector,forms six side facets of the microdisk and shows significant near-bandgap emission(NBE)and weak deep energy level luminescence.Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface(Ra<0.7 nm)and low stress.The self-assembled microdisk shows significant ultraviolet(UV)lasing action(main lasing peak wavelength 370.9 nm,quality factor 1278,threshold 6×10^(4)μJ/cm^(2))under pulsed optical pumping.We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk,the high structural quality,the low content of deep energy level defects,the low surface roughness,and the low stress.

Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

The III-nitride semiconductor microdisk laser exhibits high quality factor and low excitation threshold with broad development potential in the field of nanophotonics such as nanoscale light-emitting devices and on-chip optical integration.So far,many works have been focused on process synthesis and nanostructural design of microdisk lasers.Nevertheless,there are still some limitations in the existing optical resonance mode which is an important internal influence factor for lasing characteristics.In this work,a new double-triangular whispering-gallery mode(D3-WGM)lasing from a hexagonal GaN microdisk with a high quality(Q)factor of 3049 and an excitation threshold of around 11.5μW has been experimentally demonstrated.In addition,the optical properties of hexagonal-WGM(6-WGM),triangular-WGM(3-WGM)and D3-WGM lasing from microdisk are explored by numerical calculation and Comsol simulation.These results confirm that the D3-WGM lasing has its own significant performance advantages,namely high Q factor and easy light emission.Based on this novel laser mode characteristic,microcavity lasers are expected to be further developed and applied in the field of nanophotonics.

GaN微盘中激子与光子的耦合作用研究

在硅基GaN-LED上成功制备了不同形状和不同尺寸的微盘。通过角分辨光谱研究了圆形和不同尺寸的六边形微盘中光与激子的耦合作用。证明了微盘中共振模式的数量和强度对光与激子间的耦合作用的影响,为实现室温下GaN微盘的激子极化激元提供了依据。

光泵浦Si衬底GaN基回音壁模式微盘谐振腔激光器

氮化镓基微盘结构光学谐振腔具有波长选择范围宽、模式体积小和激射阈值低等特点,其在腔量子电动力学、低阈值激光器、生物传感器等方面具有重要的研究价值。通过优化制备微盘的干法刻蚀工艺及选择性湿法腐蚀技术,制备出侧壁陡峭且光滑的高Q值Si衬底GaN基回音壁模式微盘谐振腔,该微盘谐振腔的制备工艺简单、表面损伤小。在室温、266nm短波长激光泵浦条件下,微盘谐振腔激光器实现了激射,阈值为2.85MW/cm2,Q值达到2 161。

高Q值GaN碟状微米谐振腔的光学特性研究

通过氢化物气相外延(HVPE)方式在蓝宝石衬底上获得了GaN微米碟,其几何形态为规则的正六边形且表面平整,直径约为27μm,高度为15μm。光致发光(PL)实验结果表明,微米碟垂直方向和水平方向的光学谐振模式存在差异,其中水平方向支持回音壁模式(WGM)振荡。在室温条件下采用高能脉冲激光照射微米碟,当激励光功率超过7.8μW时,PL光谱在波长374 nm附近获得多模式激光信号,其中WGM激光占优势,品质因子可达3742。最后采用COMSOL仿真软件对谐振腔进行光场模拟,并分析了其光学模式特性。