Due to the great potential of Ga N based devices, the analysis of the growth of crack-free Ga N with high quality has always been a research hotspot. In this paper, two methods for improving the property of the Ga N e...Due to the great potential of Ga N based devices, the analysis of the growth of crack-free Ga N with high quality has always been a research hotspot. In this paper, two methods for improving the property of the Ga N epitaxial layer on Si（111） substrate are researched. Sample A, as a reference, only has an Al N buffer between the Si substrate and the epitaxy. In the following two samples, a Ga N transition layer（sample B） and an Al Ga N buffer（sample C） are grown on the Al N buffer separately. Both methods improve the quality of Ga N. Meanwhile, using the second method, the residual tensile thermal stress decreases. To further study the impact of the two introduced layers, we investigate the stress condition of Ga N epitaxial layer by Raman spectrum. According to the Raman spectrum, the calculated residual stress in the Ga N epitaxial layer is approximately 0.72 GPa for sample B and0.42 GPa for sample C. The photoluminescence property of Ga N epitaxy is also investigated by room temperature PL spectrum.展开更多
文摘Due to the great potential of Ga N based devices, the analysis of the growth of crack-free Ga N with high quality has always been a research hotspot. In this paper, two methods for improving the property of the Ga N epitaxial layer on Si（111） substrate are researched. Sample A, as a reference, only has an Al N buffer between the Si substrate and the epitaxy. In the following two samples, a Ga N transition layer（sample B） and an Al Ga N buffer（sample C） are grown on the Al N buffer separately. Both methods improve the quality of Ga N. Meanwhile, using the second method, the residual tensile thermal stress decreases. To further study the impact of the two introduced layers, we investigate the stress condition of Ga N epitaxial layer by Raman spectrum. According to the Raman spectrum, the calculated residual stress in the Ga N epitaxial layer is approximately 0.72 GPa for sample B and0.42 GPa for sample C. The photoluminescence property of Ga N epitaxy is also investigated by room temperature PL spectrum.
