This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent respo...This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the relax time was relatively short. With an increase in doped Mg content, the samples became p-type, the photocurrent response became weak and the relax time became longer.展开更多
基金This work was supported by the Natural Science Foundation of Shandong Province under the Y96A12016.
文摘This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the relax time was relatively short. With an increase in doped Mg content, the samples became p-type, the photocurrent response became weak and the relax time became longer.
