High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and...High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.展开更多
Boiling structures on evaporation surface of red copper sheet with a diameter (D) of 10 mm and a wall thickness (h) of 1 mm were processed by the ploughing-extrusion (P-E) processing method, which is one part of the p...Boiling structures on evaporation surface of red copper sheet with a diameter (D) of 10 mm and a wall thickness (h) of 1 mm were processed by the ploughing-extrusion (P-E) processing method, which is one part of the phase-change heat sink for high power (HP) light emitting diode (LED). The experimental results show that two different structures of rectangular- and triangular-shaped micro-grooves are formed in P-E process. When P-E depth (ap), interval of helical grooves (dp) and rotation speed (n) are 0.12 mm, 0.2 mm and 100 r/min, respectively, the boiling structures of triangular-shaped grooves with the fin height of 0.15 mm that has good evaporation performance are obtained. The shapes of the boiling structures are restricted by dp and ap, and dp is determined by n and amount of feed (f). The ploughing speed has an important influence on the formation of groove structure in P-E process.展开更多
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current...In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.展开更多
In order to connect several independent LEDs in series, inductively coupled plasma （ICP） deep etching of GaN is required for isolation. The GaN-based high-voltage （HV） LEDs with a 5 μm deep isolation groove and a...In order to connect several independent LEDs in series, inductively coupled plasma （ICP） deep etching of GaN is required for isolation. The GaN-based high-voltage （HV） LEDs with a 5 μm deep isolation groove and an acceptable mesa sidewall angle of 79.2° are fabricated and presented. The surface morphology and construction profile of the etched groove are characterized by laser microscopy and scanning electron microscopy. After contact metal formation and annealing, the electrical properties are evaluated by I-V characteristics. The trend of the I-V curve has good accordance with conventional LEDs. The contact resistance of HV LEDs is also tested and was reduced by 4.6 Ω compared to conventional LEDs, while the output power increased by 5 W. The results show that this technique can be applied to practical fabrication.展开更多
主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和...主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和小芯片间隙的出光,使得高压LED的发光效率优于传统大功率LED。结果显示,在相同的1 W输入功率下,高压LED的发光效率比传统大功率LED高大约4.5%。展开更多
文摘High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.
基金Projects(50436010, 50675070) supported by the National Natural Science Foundation of China Project(07118064) supported by the Natural Science Foundation of Guangdong Province, China+1 种基金 Project(U0834002) supported by the Joint Fund of NSFC-Guangdong of ChinaProjects(SY200806300289A, JSA200903190981A) supported by Shenzhen Scientific Program, China
文摘Boiling structures on evaporation surface of red copper sheet with a diameter (D) of 10 mm and a wall thickness (h) of 1 mm were processed by the ploughing-extrusion (P-E) processing method, which is one part of the phase-change heat sink for high power (HP) light emitting diode (LED). The experimental results show that two different structures of rectangular- and triangular-shaped micro-grooves are formed in P-E process. When P-E depth (ap), interval of helical grooves (dp) and rotation speed (n) are 0.12 mm, 0.2 mm and 100 r/min, respectively, the boiling structures of triangular-shaped grooves with the fin height of 0.15 mm that has good evaporation performance are obtained. The shapes of the boiling structures are restricted by dp and ap, and dp is determined by n and amount of feed (f). The ploughing speed has an important influence on the formation of groove structure in P-E process.
基金supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 8251063101000007, 10151063101000009 and 9451063101002082)the Scientific & Technological Plan of Guangdong Province (Grant Nos. 2008B010200004, 2010B010600030 and 2009B011100003)+2 种基金the National Natural Science Foundation of China(Grant Nos. 61078046 and 10904042)the Key Project of Chinese Ministryof Education (Grant No. 210157)the Scientific & Technological Project of Education Department of Hubei Province (Grant No. D20101104)
文摘In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.
基金supposed by the National High Technology Research and Development Program of China(No.2009AA03A1A3)the National Key Technologies R&D Program of China(No.2011BAE01B14)
文摘In order to connect several independent LEDs in series, inductively coupled plasma （ICP） deep etching of GaN is required for isolation. The GaN-based high-voltage （HV） LEDs with a 5 μm deep isolation groove and an acceptable mesa sidewall angle of 79.2° are fabricated and presented. The surface morphology and construction profile of the etched groove are characterized by laser microscopy and scanning electron microscopy. After contact metal formation and annealing, the electrical properties are evaluated by I-V characteristics. The trend of the I-V curve has good accordance with conventional LEDs. The contact resistance of HV LEDs is also tested and was reduced by 4.6 Ω compared to conventional LEDs, while the output power increased by 5 W. The results show that this technique can be applied to practical fabrication.
文摘主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和小芯片间隙的出光,使得高压LED的发光效率优于传统大功率LED。结果显示,在相同的1 W输入功率下,高压LED的发光效率比传统大功率LED高大约4.5%。
