Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region...Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.展开更多
We study the procedure of miniband formation in CaN/lAIN constant-total-effective-radius multi-shell quantum dots （CTER-MSQDs） by calculating the subband energies. We find a different behavior of the miniband widths...We study the procedure of miniband formation in CaN/lAIN constant-total-effective-radius multi-shell quantum dots （CTER-MSQDs） by calculating the subband energies. We find a different behavior of the miniband widths and miniband gaps when the number of wells changes. It is shown that with increasing the inner quantum dot radiusRin, the number of minigaps decreases; with increasing the outer quantum dot radius Rout, the number of minigaps increases. We show that in the CTER-MSQDs systems, two kinds of minigaps exist： in the type （i） ones, minigaps increase monotonically when the number of wells increases while in the type （ii） ones, with increasing the number of wells, some of minigaps create, increase, at a critical number of wells decrease and finally vanish. Thus tuning of the m/nigaps and miniband widths in the CTER-MSQDs systems by using the number of wells, inner and outer quantum dot radii Rin and Rout is now possible.展开更多
Hybrid white micro-pillar structure light emitting diodes(LEDs)have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS((CuInS2-ZnS)/ZnS)core/shell quantum dots.The fabricated hybrid white mic...Hybrid white micro-pillar structure light emitting diodes(LEDs)have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS((CuInS2-ZnS)/ZnS)core/shell quantum dots.The fabricated hybrid white micro-LEDs have good electrical properties,which are manifested in relatively low turn-on voltage and reverse leakage current.High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization,in which the corresponding color coordinates are calculated to be(0.3303,0.3501)and the calculated color temperature is 5596 K.This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays,bioinstrumentation and visible light communication.展开更多
Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum do...Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the bin...展开更多
基金This work was supported by the National Natural Science Foundation of China(Nos.U21A20493,62104204,and 62234011)the National Key Research and Development Program of China(No.2017YFE0131500)the President’s Foundation of Xiamen University(No.20720220108).
文摘Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.
基金Supported by the Iranian Nanotechnology Initiative Councilthe Shahrood University of Technology
文摘We study the procedure of miniband formation in CaN/lAIN constant-total-effective-radius multi-shell quantum dots （CTER-MSQDs） by calculating the subband energies. We find a different behavior of the miniband widths and miniband gaps when the number of wells changes. It is shown that with increasing the inner quantum dot radiusRin, the number of minigaps decreases; with increasing the outer quantum dot radius Rout, the number of minigaps increases. We show that in the CTER-MSQDs systems, two kinds of minigaps exist： in the type （i） ones, minigaps increase monotonically when the number of wells increases while in the type （ii） ones, with increasing the number of wells, some of minigaps create, increase, at a critical number of wells decrease and finally vanish. Thus tuning of the m/nigaps and miniband widths in the CTER-MSQDs systems by using the number of wells, inner and outer quantum dot radii Rin and Rout is now possible.
基金supported by National Key R&D Program of China (2016YFB0400100)National Nature Science Foundation of China (61921005, 61674076, 61674081, 61605071, 61974062)+5 种基金Nature Science Foundation of Jiangsu Province (BY2013077, BK20141320, BE2015111)Six Talent Peaks Project of Jiangsu Province (XYDXX-081)Open Fund of the State Key Laboratory on Integrated Optoelectronics (IOSKL2017KF03)Innovation Project of Postgraduate Training in Jiangsu Province (KYCX18_0031)Fundamental Research Funds for the Central Universities (021014380096)Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics
文摘Hybrid white micro-pillar structure light emitting diodes(LEDs)have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS((CuInS2-ZnS)/ZnS)core/shell quantum dots.The fabricated hybrid white micro-LEDs have good electrical properties,which are manifested in relatively low turn-on voltage and reverse leakage current.High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization,in which the corresponding color coordinates are calculated to be(0.3303,0.3501)and the calculated color temperature is 5596 K.This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays,bioinstrumentation and visible light communication.
基金supported by the National Natural ScienceFoundation of China (No. 10564003)the Key Project of theScience and Technology Research of the Educational Ministry ofChina (No. 208025)
文摘Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the bin...
