Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor depositi...Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.展开更多
Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS)has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development.The r...Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS)has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development.The research results were spoken highly at a panel meeting of experts held on 26 November,2007 in Beijing.展开更多
文摘Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.
文摘Aresearch team led by YANG Hui and CHEN Lianghui with the CAS Institute of Semiconductors (ISCAS)has made breakthrough progress in addressing key technological problems for the GaN-based laser diodes development.The research results were spoken highly at a panel meeting of experts held on 26 November,2007 in Beijing.
