GaN nanowires were successfully pre-pared on Si(111) substrate through ammoniating Ga2O3/BN films deposited by radio frequency mag-netron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzi...GaN nanowires were successfully pre-pared on Si(111) substrate through ammoniating Ga2O3/BN films deposited by radio frequency mag-netron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photolumi-nescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.展开更多
基金This work was supported by the Key Research Program of the National Natural Science Foundation of China(Grant No.90201025)the National Natural Science Foundation of China(Grant No.90301002).
文摘GaN nanowires were successfully pre-pared on Si(111) substrate through ammoniating Ga2O3/BN films deposited by radio frequency mag-netron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photolumi-nescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.
