Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED

GaN-based irregular multiple quantum well （IMQW） structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes （LEDs） are optimized in order to obtain near white light emissions. The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain, well-coupling, valence band-mixing and polarization effect through employing a newly developed theoretical model from the k. p theory. Several structure parameters such as well material component, well width, layout of the wells and the thickness of harrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure. Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two, the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness. The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.

Aging mechanism of GaN-based yellow LEDs with V-pits

GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm^2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm^2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

Progress and prospects of GaN-based LEDs using nanostructures

Progress with GaN-based light emitting diodes （LEDs） that incorporate nanostructures is reviewed, especially the re- cent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an A1N template layer for deep-ultraviolet （DUV） LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostruc- tures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostruc- tures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication.

CsPbBr_(3)@MIL-53纳米复合荧光粉的合成、性能及其白光LEDs应用

全无机钙钛矿(CsPbX3,X=Cl,Br,I)纳米晶因其卓越的光电性能被广泛应用于光电子器件领域,但稳定性问题仍然是制约其商业化发展的主要因素之一。基于此,本研究以提高CsPbBr_(3)纳米晶的稳定性和固态发光性能为研究目标,选用具有优异疏水性能的多孔MIL-53(Al)金属有机框架(MOFs)作为封装基质,通过热注射工艺在MIL-53(Al)孔道内原位限域生长CsPbBr_(3)纳米晶,成功制备了优异发光性能和稳定性的CsPbBr_(3)@MIL-53纳米复合荧光粉。MIL-53通过包含的苯环和有机配体与CsPbBr_(3)纳米晶螯合,将其稳固地锚定在孔道内,既保护了CsPbBr_(3)纳米晶免受外界环境的影响,又有效防止了纳米晶之间的聚集,从而避免了固态荧光猝灭。此外,MIL-53中的COO-官能团与CsPbBr_(3)纳米晶表面未配对的Pb2+结合,钝化了其表面的缺陷,抑制了载流子的非辐射复合。MIL-53包含的苯环及有机长链又赋予了纳米复合荧光粉出色的疏水性能。这些因素的协同作用显著提升了CsPbBr_(3)@MIL-53纳米复合荧光粉的光学性能和水稳定性,其荧光量子产率(Photoluminescence Quantum Yield,PLQY)为75.4%,是固态CsPbBr_(3)纳米晶粉体(33.2%)的2.3倍。将CsPbBr_(3)@MIL-53纳米复合荧光粉完全浸泡在水中10h,其荧光强度仍能维持初始值的75.6%。最后,将绿光发射的CsPbBr_(3)@MIL-53纳米复合荧光粉应用于白光发光二极管(LightEmittingDiodes,LEDs)器件,实现了126%NTSC和85%Rec.2020的宽色域覆盖面积,表明其在显示器件领域具有优异的应用前景。

Luminescence characteristics of Eu^(2+) activated Ca_2SiO_4,Sr_2SiO_4 and Ba_2SiO_4 phosphors for white LEDs

This paper investigates the luminescence characteristics of Eu2＋ activated Ca2SiO4, Sr2SiO4 and Ba2SiO4 phosphors. Two emission bands are assigned to the f-d transitions of Eu2＋ ions doped into two different cation sites in host lattices, and show different emission colour variation caused by substituting M2＋ cations for smaller cations. This behaviour is discussed in terms of two competing factors of the crystal field strength and covalence. These phosphors with maximum excitation of around 370 nm can be applied as a colour-tunable phosphor for light-emitting diodes （LEDs） based on ultraviolet chip/phosphor technology.

Luminescence characteristics of LiCaBO_3:Tb^(3+) phosphor for white LEDs

A novel green phosphor,LiCaBO3:Tb3+,was synthesized by solid state reaction method,its luminescence characteristics were investigated,and the formation of phosphors were confirmed by X-ray powder diffraction(XRD).Its excitation band extended from 220 to 400 nm,which was coupled well with the emission of UV LED(350-410 nm).It exhibited a strong green emission located at 544 nm with chromatic coordination(0.25,0.58).The emission intensities of LiCaBO3:Tb3+ phosphor were influenced by varying Tb3+ concentratio...

31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

Although the 5G wireless network has made significant advances,it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras.As a result,emerging technologies in higher frequencies including visible light communication(VLC),are becoming a hot topic.In particular,LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing(WDM)technology.This paper proposes an optimized multi-color LED array chip for high-speed VLC systems.Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency,especially in the“yellow gap”region,and it achieves significant improvement in data rate compared with earlier research.This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model,which provides an explanation of the simulation and experiment results.In the final test using a laboratory communication system,the data rates of eight channels from short to long wavelength are 3.91 Gb/s,3.77 Gb/s,3.67 Gb/s,4.40 Gb/s,3.78 Gb/s,3.18 Gb/s,4.31 Gb/s,and 4.35 Gb/s(31.38 Gb/s in total),with advanced digital signal processing(DSP)techniques including digital equalization technique and bit-power loading discrete multitone(DMT)modulation format.

Tunable Emission and Energy Transfer of the Novel KY_(1-x)(MoO_(4))_(2-y)(WO_(4))y:xLn^(3+)(Ln^(3+)=Dy^(3+),Eu^(3+),and Tm^(3+))Single-phase White Luminescence Phosphor for White LEDs

The phosphors of KY_(1-x)(MoO_(4))_(2-y)(WO_(4))y:xLn^(3+)(Ln^(3+)=Tm^(3+),Dy^(3+),Eu^(3+))were synthesized by using a sol-gel method.Then,the crystal structure,luminescence properties,energy transfer,and white emission of the prepared materials were researched.The molar ratio of the anion group on the photoluminescence(PL)emission and excitation intensity were investigated,revealing that the optimum intensity could be obtained by using=3:1.The optimal Dy^(3+) doping concentration of KY(MoO_(4))1.5(WO4)0.5was obtained.In addition,the color-tunable emissions of Dy^(3+)/Eu^(3+)-codoped KY(MoO_(4))1.5(WO4)0.5phosphors were observed because of the effective energy transfer(ET)from Dy^(3+)to Eu^(3+)ions.Finally,by doping appropriate concentrations of Tm^(3+),Dy^(3+),and Eu^(3+)and different concentrations of(WO_(4))^(2-),white light emitting phosphors KY_(0.92)(WO_(4))2:0.01Tm^(3+),0.06Dy^(3+),0.01Eu^(3+)with excellent color-rending properties were obtained.The chromaticity coordinate was calculated as(x=0.3238,y=0.3173),closing to the artificial daylight(D65,x=0.313,y=0.329)illuminant,and which indicates the potential application of near ultraviolet White light-emitting diodes(WLEDs).

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

Design, fabrication and characterizations of GaN-based blue micro light emitting diode （LED） arrays are reported. The GaN micro-LED array consists of 320×256 pixels with a pitch size of 30μm. Each pixel is 25×25μm^2 in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.

Fabrication of High-power White LEDs and White Light Uniformity Testing

As the blue and yellow lights are complementary colors, a blue InGaN LED chip is coated hy a yellow phosphor film to generate white light based on luminescence conversion mechanism. The emitted light of a blue LED is used as the primary source for exciting fluorescent material such as cerium doped yttrium aluminum garnet with the formula Y3Al2O12 ： Ce^3＋ （in short： YAG ： Ce^3＋ ）. The matching of the spectrum of the blue LED chips and the YAG ： Ce^3＋ yellow phosphor is studied to improve the conversion efficiency. The packaging methods and manufacturing processes for high power single chip-white LEDs are introduced. The uniformity of the output white light is investigated. Based on the characteristics of the high power white LEDs, some approaches and processes are suggested to improve the light uniformity when they are fabricated. The effectiveness of those approaches on the improvement of LEDs is discussed in detail and some interesting conclusions are also presented.

Spectral Properties of Yellow Fluorescent Powder for White LEDs

Much attention has been paid to white LEDs because of their potential applications in the illumination.The doping of rare earth ions plays an important role in the optical properties of yellow fluorescent powder.And mainly aiming to raise the intensity and the luminous rate of the white LEDs and by photoluminescence and electroluminescence,the luminescence spectrum of yellow fluorescent powder bought from different places is measured.Furthermore, the luminous intensity in the normal direction and the angle distribution of half maximum power for the white LEDs packed with cylindrical Φ 5 epoxy on the same blue GaN chips are also measured under the same manufacture conditions. The results show that the yellow fluorescent powder bought from China mainland has higher optical output rate than that bought from China Taiwan and hence is more suitable to fabricate the white LEDs for practical use.

High performance Ga N-based hybrid white micro-LEDs integrated with quantum-dots

Hybrid white micro-pillar structure light emitting diodes(LEDs)have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS((CuInS2-ZnS)/ZnS)core/shell quantum dots.The fabricated hybrid white micro-LEDs have good electrical properties,which are manifested in relatively low turn-on voltage and reverse leakage current.High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization,in which the corresponding color coordinates are calculated to be(0.3303,0.3501)and the calculated color temperature is 5596 K.This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays,bioinstrumentation and visible light communication.

Simulation Study on Optical Properties of GaN-based Blue LED

The optical properties of GaN-based blue light-emitting diodes(LEDs)are extremely important to study as these LEDs are utilized in a great many industries due to their excellent qualities,including high brightness,high energy efficiency,low energy consumption,and rapid reaction time.In this paper,Silvaco TCAD simulation software is used to do two-dimensional modeling and simulation of a GaN-based blue single quantum well vertical structure LED,with an emphasis on varied forward voltages,In components in InGaN,and quantum well thickness.The volt-ampere characteristic curve is compared and evaluated,as well as the energy band structure,carrier concentration,radiation recombination efficiency,electroluminescence spectrum,and internal current density distribution.The results show that when the forward voltage is 3.5V and the thickness of the quantum well is constant,the luminescence spectrum will show a red shift with the increase of the In content in the quantum well,and the luminescence spectrum will also show a red shift when the thickness of the quantum well is increased.However,when the quantum well thickness and In component are kept constant,the luminescence spectrum appears a red shift with increasing forward voltage.

提高基于粉浆法的功率型白光LEDs发光效率的研究

基于水溶性感光胶的自光LEDs平面涂层技术，在蓝光LED芯片表面上得到了可控的荧光粉层．采用降低粉浆中ADC的浓度和提高荧光粉的含量两种措施，减少Cr^3＋在433．6和620nm两处吸收对器件出光效率的影响；新配制的粉浆在暗室中静置3～5h，既可以提高器件的出光效率同时又避免了暗反应带来的影响；在蓝光LED表面上得到粉层后，再涂覆硅胶层，由于硅胶的折射率与粉层的更接近，不但使出光色调偏向蓝光区域而且有更多光子出射，光通量由未加硅胶层时的44．8～59lm提高到了79．4～84．9lm．

基于粉浆法提高功率型白光LEDs的提取效率(英文)

讨论了基于水溶性感光胶的荧光粉的涂层技术,利用粉浆法,在蓝光LED芯片的表面获得了荧光粉平面涂层。证实了得到的白光LED的光提取效率与粉浆中各成份的浓度和相应的比例有关,并在实验的基础上,采用了一些切实切可行的措施来增加器件的光提取效率。得到的白光LED在700 mA加速老化168 h后,其光能量为初始时的95.95%。

紫外-近紫外基白光LEDs用荧光粉的研究进展

白光LEDs作为新一代照明光源,和前几代照明光源相比,具有发光效率高、使用寿命长、节能环保等一系列突出的优点。本文总结了最近几年用于白光LEDs的紫外-近紫外激发型荧光粉的研究结果,梳理了各个基质体系荧光粉的发展现状,并展望了白光LEDs用荧光粉的研究趋势。

新型W-LEDs用黄色荧光粉YAG∶Mn^(2+)的光谱性能研究

通过还原气氛下的高温固相法合成了荧光粉YAG∶Mn,并对其光谱性质进行了表征。结果表明:荧光粉YAG∶Mn中Mn的价态是+2价;其发射光谱为在590 nm有最强发射的宽带状光谱,激发光谱在411~424 nm的范围内最强,所以此荧光粉是理想的可与紫光LED(411~424 nm)

LED白光的亚甲蓝光化学法血浆病毒灭活研究

目的探讨LED白光的亚甲蓝光化学法对血浆中的病毒灭活效果。方法血浆中加入终浓度为1μM的亚甲蓝,以LED白光为光源,比较不同处理方式(10 cm/5 cm照射间距、单侧/双侧照射)、不同照射强度(30000 lx、35000 lx、40000 lx、45000 lx、50000 lx)和不同处理时间点(10 min、20 min、30 min)的血浆中凝血因子的活性及Sindbis病毒的灭活效果。结果在50000 lx照射强度下,随着照射时间的增加,血浆温度逐渐升高,升温幅度为5 cm间距>10 cm间距,双侧照射>单侧照射。5 cm/10 cm间距、单侧/双侧照射对凝血因子Ⅷ和纤维蛋白原(FIB)活性的影响均没有显著差异。以10 cm间距、双侧照射的处理方式作为病毒灭活装置条件参数,用30000 lx、35000 lx、40000 lx、45000 lx和50000 lx的光照强度分别照射5 min后,血浆中Sindbis病毒被灭活,滴度下降均>4 LogTCID50/0.1 mL;照射20 min后,血浆中凝血因子Ⅷ活性>70%、FIB活性>60%。光照强度与凝血因子损失的相关分析表明:不同的光照强度与凝血因子Ⅷ的活性损失没有相关性,光照的强度对FIB的影响表现在照射的20 min以内,照射强度越大FIB活性下降越严重,但照射30 min后不同的光照强度对FIB的影响已没有显著性差异。照射时间与凝血因子的损失高度相关,不同光照强度下凝血因子都随着照射时间的增加而损失。结论LED白光可以作为亚甲蓝病毒灭活方法的新光源,在合适的条件下有效灭活血浆中的病毒,并保留血浆中凝血因子的活性。

Luminescent characteristics of Ba_3Y_2(BO_3)_4:Eu^(3+) phosphor for white LED

The Ba3Y2（BO3）4：Eu^3＋ phosphor was synthesized using a high temperature solid-state reaction method and the luminescent characteristics were investigated. The emission spectrum exhibited one strong red emission at 613 nm, corresponding to the electric dipole 5D0-TF2 transition of Eu^3＋, under 365 nm excitation. The excitation spectrum of 613 nm indicated that the Ba3Y2（BO3）n：Eu^3＋ phosphor was effectively excited by ultraviolet （UV） （254, 365 and 400 nm） and blue （470 nm） light. The effect of Eu^3＋ concentration on the 613 nm emission of the Ba3Y2（BO3）n：Eu^3＋ phosphor was measured. The results showed that the emission intensity increased with increasing Eu^3＋ concentration, and then decreased. The CIE color coordinates of Ba3Y2（BO3）4：Eu^3＋ phosphor were x=0.641 and y=0.359 at 15 mol.% Eu^3＋.