Elastic wave propagation and localization in band gap materials:a review

Band gap materials(i.e.phononic crystals) are the artificially periodic structures,which have the stop band characteristic for elastic waves.The elastic waves will be localized in phononic crystals with defects,which results in the energy being accumulated around the defects.As a result,it is important to analyze the wave propagation and localization in band gap materials,especially for the structures consisting of smart materials.For example,with the mechanical-electro and mechanical-electro-magneto coupling,the phononic crystals consisting of piezoelectric and magnetoelectroelastic materials can be applied widely.This sets the theoretical basis for the design of band gap materials with multi fields coupling.This paper reviews the recent development of the elastic wave propagation and localization in both ordered and disordered band gap materials.The discussion focuses on the stop band and localization characteristics of elastic waves.Analytical methods and important results are also presented.Finally,some problems for further studies are discussed.This work aims to present the basic properties of wave band gaps in phononic crystals and wave localization in disordered periodic structures(e.g.phononic crystals with definite and random defects and phononic quasicrystals).

Local resonance phononic band gaps in modifiedtwo-dimensional lattice materials

In this paper, modified two-dimensional peri- odic lattice materials with local resonance phononic band gaps are designed and investigated. The design concept is to introduce some auxiliary structures into conventional pe- riodic lattice materials. Elastic wave propagation in this kind of modified two-dimensional lattice materials is studied us- ing a combination of Bloch＇s theorem with finite element method. The calculated frequency band structures of illus- trative modified square lattice materials reveal the existence of frequency band gaps in the low frequency region due to the introduction of the auxiliary structures. The mechanism underlying the occurrence of these frequency band gaps is thoroughly discussed and natural resonances of the auxiliary structures are validated to be the origin. The effect of geo- metric parameters of the auxiliary structures on the width of the local resonance phononic band gaps is explored. Finally, a conceptual broadband vibration-insulating structure based on the modified lattice materials is designed and its capabil- ity is demonstrated. The present work is anticipated to be useful in designing structures which can insulate mechanical vibrations within desired frequency ranges.

Analysis of Three Coupled Defects in One-Dimensional Photonic Bandgap Structure

The mutual interaction of three different defects in photonic crystals is studied theoretically. A theoretical model based on the classical wave analogue of the tight-binding （TB） picture is applied to the structure. We obtain analytic expressions for the eigenfrequencies and eigenmodes, from which the transmissions at resonance are derived. Based on this, a new type of the photonic quantum-well structure is investigated and its possible application is discussed. The TB predictions are compared with the transfer matrix method simulation results.

Observation of trapped light induced by Dwarf Dirac-cone in out-of-plane condition for photonic crystals

Existence of out-of-plane conical dispersion for a triangular photonic crystal lattice is reported. It is observed that conical dispersion is maintained for a number of out-of-plane wave vectors（k;）. We study a case where Dirac like linear dispersion exists but the photonic density of states is not vanishing, called Dwarf Dirac cone（DDC） which does not support localized modes. We demonstrate the trapping of such modes by introducing defects in the crystal. Interestingly, we find by k-point sampling as well as by tuning trapped frequency that such a conical dispersion has an inherent light confining property and it is governed by neither of the known wave confining mechanisms like total internal reflection, band gap guidance. Our study reveals that such a conical dispersion in a non-vanishing photonic density of states induces unexpected intense trapping of light compared with those at other points in the continuum. Such studies provoke fabrication of new devices with exciting properties and new functionalities.

A compact in-plane photonic crystal channel drop filter

This paper presents a novel in-plane photonic crystal channel drop filter. The device is composed of a resonant cavity sandwiched by two parallel waveguides. The cavity has two resonant modes with opposite symmetries. Tuning these two modes into degeneracy causes destructive interference in bus waveguide, which results in high forward drop efficiency at the resonant wavelength. From the result of numerical analysis by using two-dimensional finite-difference time-domain method, the channel drop filter has a drop efficiency of 96% and a Q value of over 3000, which can be used in dense wavelength division multiplexing systems.

光反应型LCD间隙控制材料的研制

采用丙烯酸类单体以及各种功能性配合物制备了光反应型高分子树脂,该材料分子结构中具有可提高对ITO金属膜附着力的羟基基团,还具有能提高耐热性的苯环骨架结构。对其光敏性进行了测试,确定该材料具有快速固化的特点。通过对该材料的透光率、耐热性能的详细测试与比对,确定了该材料具有高透光率以及高耐热性能的特点,铅笔硬度测试结果在3H以上,表明该材料可作为LCD间隙控制材料使用。

Two dimensional GeO_(2)/MoSi_(2)N_(4)van der Waals heterostructures with robust type-Ⅱ band alignment

Constructing two-dimensional(2D)van der Waals heterostructures(vdWHs)can expand the electronic and optoelectronic applications of 2D semiconductors.However,the work on the 2D vdWHs with robust band alignment is still scarce.Here,we employ a global structure search approach to construct the vdWHs with monolayer MoSi_(2)N_(4)and widebandgap GeO_(2).The studies show that the GeO_(2)/MoSi_(2)N_(4)vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and typeII band alignment with GeO_(2)and MoSi_(2)N_(4)layers as the conduction band minimum(CBM)and valence band maximum(VBM),respectively.Also,the direct-to-indirect band gap transition can be achieved by applying biaxial strain.In particular,the 2D GeO_(2)/MoSi_(2)N_(4)vdWHs show a robust type-II band alignment under the effects of biaxial strain,interlayer distance and external electric field.The results provide a route to realize the robust type-II band alignment vdWHs,which is helpful for the implementation of optoelectronic nanodevices with stable characteristics.