GaSb quantum dots have been widely applied in optoelectronic devices due to its unique electrical and optical properties.The effects of metal-organic chemical vapor deposition（MOCVD） parameters,such as growth temper...GaSb quantum dots have been widely applied in optoelectronic devices due to its unique electrical and optical properties.The effects of metal-organic chemical vapor deposition（MOCVD） parameters,such as growth temperature and vapour V/Ⅲ ratio[V/Ⅲ ratio means the molar ratio of trimethylgallium（TMGa） and triethylantimony（TESb）],were systematically investigated to achieve GaSb quantum dots with high quality and high density.The features of surface morphology of uncapped GaSb quantum dots were characterized by atomic force microscope（AFM） images.The results show that the surface morphologies of quantum dots are strongly dependent on growth temperature and vapour V/Ⅲ ratio.GaSb quantum dots with an average height of 4.94 nm and a density of 2.45× 1010 cm-2 were obtained by optimizing growth temperature and V/Ⅲ ratio.展开更多
基金Supported by the National Natural Science Foundation of China（No.61076010） and the Program of the State Key Laboratory on Integrated Optoelectronics, China（No. IOSKL2012ZZ13）.
文摘GaSb quantum dots have been widely applied in optoelectronic devices due to its unique electrical and optical properties.The effects of metal-organic chemical vapor deposition（MOCVD） parameters,such as growth temperature and vapour V/Ⅲ ratio[V/Ⅲ ratio means the molar ratio of trimethylgallium（TMGa） and triethylantimony（TESb）],were systematically investigated to achieve GaSb quantum dots with high quality and high density.The features of surface morphology of uncapped GaSb quantum dots were characterized by atomic force microscope（AFM） images.The results show that the surface morphologies of quantum dots are strongly dependent on growth temperature and vapour V/Ⅲ ratio.GaSb quantum dots with an average height of 4.94 nm and a density of 2.45× 1010 cm-2 were obtained by optimizing growth temperature and V/Ⅲ ratio.
