AgGa_(1-x)In_(x)Se_(2)polycrystals were synthesized by the method of mechanical oscillation and temperature oscillation.X-ray diffraction spectra of polycrystal powder are conformable with the JCPDS cards.Lattice cons...AgGa_(1-x)In_(x)Se_(2)polycrystals were synthesized by the method of mechanical oscillation and temperature oscillation.X-ray diffraction spectra of polycrystal powder are conformable with the JCPDS cards.Lattice constants a and c calculated from the XRD were found to obey Vegard's law.The melting point of AgGa_(0.8)In_(0.2)Se_(2)obtained by means of differential scanning calorimetry(DSC)is 796.53℃.The DSC curve also show that there are no other transformation points below the melting point.The results indicate that polycrystalline materials synthesized by the method mentioned above are high-quality and can be used to grow single crystals by the vertical Bridgman technology.展开更多
In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of su...In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.展开更多
High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarif...High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.展开更多
Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and ban...Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.展开更多
基金Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education(20040610024)
文摘AgGa_(1-x)In_(x)Se_(2)polycrystals were synthesized by the method of mechanical oscillation and temperature oscillation.X-ray diffraction spectra of polycrystal powder are conformable with the JCPDS cards.Lattice constants a and c calculated from the XRD were found to obey Vegard's law.The melting point of AgGa_(0.8)In_(0.2)Se_(2)obtained by means of differential scanning calorimetry(DSC)is 796.53℃.The DSC curve also show that there are no other transformation points below the melting point.The results indicate that polycrystalline materials synthesized by the method mentioned above are high-quality and can be used to grow single crystals by the vertical Bridgman technology.
基金the DFG research training group GRK 1896 at Erlangen University and from the Joint Project Helmholtz-Institute Erlangen-Nürnberg(HI-ERN)for Renewable Energy Production under Project DBF01253,respectivelyfinancial support through the“Aufbruch Bayern”initiative of the state of Bavaria(EnCN and Solar Factory of the Future)and the“Solar Factory of the Future”with the Energy Campus Nürnberg(EnCN).
文摘In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.
基金financially supported by the National Natural Science Foundation of China(Nos.62074018,62174015 and 62275032)the Developing Project of Science and Technology of Jilin Province(No.20210509061RQ)+3 种基金the Natural Science Foundation of Jilin Province(No.20210101473JC)National Key R&D Program of China(No.2021YFB3201901)The Natural Science Foundation of Chongqing China(No.cstc2021jcyjmsxmX1060)supported by R&D project of Collighter Co.,Ltd。
文摘High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.
基金Project supported by the National Natural Science Foundation of China(Nos.61764001,61665001,51665009,11965009,61874036,and 61805053)the Guangxi Science and Technology Base and Talent Special Project,China(Nos.AD18281084,AD18281030,AD18281034,and AD18281037)+3 种基金the Guangxi Key Laboratory of Precision Navigation Technology and Application,China(No.DH201808)the One Hundred Person Project of Guangxi as well as the Thousands of Key Teacher Training Project of Guangxi Education Department,Chinathe Innovation Project of Guilin University of Electronic Technology Graduate Education,China(No.2019YCXS021)the Natural Science Foundation of Shanghai,China(No.19ZR1420100)。
文摘Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.
