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A Novel Technique to Measure Gain Spectrum for Fabry-Pérot Semiconductor Lasers
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作者 Wei-Hua Guo, Qiao-Yin Lu, Yong-Zhen Huang, Chun-Lin Han, Li-Juan Yu State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China, Tel: 010-82304524, E-mail: gwh@redsemi.ac.cn 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期331-332,共2页
A novel gain measurement technique based on the integration of the measured amplified spontaneous emission spectrum multiplying a phase function over one longitudinal mode interval is proposed for Fabry-Perot semicond... A novel gain measurement technique based on the integration of the measured amplified spontaneous emission spectrum multiplying a phase function over one longitudinal mode interval is proposed for Fabry-Perot semiconductor lasers. 展开更多
关键词 for of ab in ASE rot Semiconductor Lasers A Novel Technique to Measure gain spectrum for Fabry-P
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