Galfenol薄片式力传感器的理论研究与设计

为了提高磁致伸缩传感器的性能,并解决材料的脆性问题,设计了铁镓合金(Galfenol)薄片复合非磁性基底作为敏感元件。以基于J-A模型和磁-机效应法的动态耦合模型为依据,利用感应线圈采集Galfenol磁致伸缩逆效应的力感知信号,实现外力检测的目的。COMSOL仿真结果验证了模型描述磁化过程的有效性,传感器经信号采集系统放大后的输出电压可达60 mV以上,并与外力保持良好的线性度。

基于ScAlN/FeGa结构的磁电声表面波谐振器

该文研究基于磁致伸缩FeGa合金衬底的磁电声表面波(SAW)谐振器。首先,在FeGa磁致伸缩衬底上溅射沉积了ScAlN压电薄膜,完成了单端口声表面波谐振器的制备;其次,采用X线衍射仪(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)等手段对ScAlN薄膜进行结构分析;最后,采用矢量网络分析仪和微波探针台测试S参数和群时延。结果表明,ScAlN薄膜晶粒呈柱状生长且具有高度(002)取向,薄膜表面粗糙度在2.36nm左右;当ScAlN压电薄膜厚为0.7μm,波长为15.74μm时,SAW谐振器的谐振频率为218.75 MHz,相速度为3 443m/s,机电耦合系数为0.06%,与COMSOL仿真计算结果较吻合。

Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal(100) GaAs and(001) Si Substrate Fabricated by Pulsed Laser Deposition

FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs substrate.The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities.However,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.