Two-qubit and three-qubit controlled gates with cross-Kerr nonlinearity

Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.

Nonlocal multi-target controlled controlled gate using Greenberger–Horne–Zeilinger channel and qutrit catalysis

We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two（N＋1）-qubit Greenberger–Horne–Zeilinger（GHZ） states as quantum channel and N qutrits as catalyser. The quantum network that implements this nonlocal（N＋2）-body gate is built entirely of local single-body and two-body gates, and has only（3N＋2） two-body gates. This result suggests that both the computational depth of quantum network and the quantum resources required to perform this nonlocal gate might be significantly reduced. This scheme can be generalized straightforwardly to implement a nonlocal N-target and M-control qubits gate.

Research on reform schemes of control methods of inlet gate in Jiaxin Hydropower Station

The simple gate control system which is made of traditional manual or proximity switch cannot meet the requirements of connecting with the computer monitoring system of hydropower station, it must be reformed. On the basis of the integrated analysis for small hydropower station, the paper discussed the singlechip as the core to realize the methods of gate automatic control system in small hydropower station. The designs for hardware and software of gate control system were introduced. And the control system was reformed from customary manual control to computer automatic control. The simulation experiment shows that this scheme is feasible.

One step to generate quantum controlled phase-shift gate using a trapped ion

This paper presents a very simple scheme for generating quantum controlled phase-shift gate with only one step by using the two vibrational modes of a trapped ion as the two qubits. The scheme couples two vibration degrees of freedom coupled with a suitable chosen laser excitation via the ionic states.

Direct implementation of a scalable non-local multi-qubit controlled phase gate via optical fibres and adiabatic passage

This paper presents a direct implementation scheme of the non-local multi-qubit controlled phase gate by using optical fibres and adiabatic passage. The smaller operation number for implementing the multi-qubit controlled phase gate and needlessness for addressing individually save physical resource and lower the difficulties of experiment. Mean- while, the scheme is immune from some decoherence effects such as the atomic spontaneous emission and fibre loss. In principle, it is scalable.

Complete hyperentangled Greenberger–Horne–Zeilinger state analysis for polarization and time-bin hyperentanglement

We present an efficient scheme for the complete analysis of hyperentangled Greenberger–Horne–Zeilinger(GHZ)state in polarization and time-bin degrees of freedom with two steps. Firstly, the polarization GHZ state is distinguished completely and nondestructively, resorting to the controlled phase flip(CPF) gate constructed by the cavity-assisted interaction. Subsequently, the time-bin GHZ state is analyzed by using the preserved polarization entanglement. With the help of CPF gate and self-assisted mechanism, our scheme can be directly generalized to the complete N-photon hyperentangled GHZ state analysis, and it may have potential applications in the hyperentanglement-based quantum communication.

Scheme for teleportation of an unknown atomic state via a cluster state in cavity QED

This paper proposes an experimentally feasible scheme for teleportation of an unknown two-atom entangled state, where a cluster state is used as the quantum channel. This scheme does not need any joint measurement. In addition, the successful probability and fidelity of teleportation can both reach 1.0. The current scheme can be realized within the current experimental technology.

Efficient generation of two-dimensional cluster states in a cavity QED

We propose a scheme to achieve a kind of nontrivial multipartite pair-wise controlled phase operation in a cavity QED setup. The operation implemented is of geometrical nature and is not sensitive to the thermal state of the cavity. In particular, we have managed to avoid the conventional dispersive coupling so that high speed gate operation is achieved which is very important in view of decoherence. We show that this multipartite pair-wise controlled phase operation makes the generation of two-dimensional cluster states very efficient.

Implementation of a many-qubit Grover search by cavity QED

We explore the possibility of an N-qubit （N 〉 3） Grover search in cavity QED, based on a fast operation of an N-qubit controlled phase-flip with atoms in resonance with the cavity mode. We demonstrate both analytically and numerically that our scheme can be achieved efficiently to find a marked state with high fidelity and high success probability. As an example, a ten-qubit Grover search is simulated specifically under the discussion of experimental feasibility and challenge. We argue that our scheme is applicable to the case involving an arbitrary number of qubits. As cavity decay is involved in our quantum trajectory treatment, we can analytically understand the implementation of a Grover search subject to dissipation, which will be very helpful for relevant experiments.

Dual pH and glucose sensitive gel gated mesoporous silica nanoparticles for drug delivery

A low molecular weight gelator with dual pH and glucose sensitive moieties was synthesized. The gelator penetrated in the mesopores of silica nanoparticles(MSNs) and formed low molecular weight gel(LMWG) as gate to fabricate dual pH and glucose responsive nano drug delivery system. Antidiabetic drug was loaded in the gel caped MSNs, the drug release was responsive to the pH and glucose levels and the drug release could be controlled via the stimuli sensitivity of gel.

AFBNet: A Lightweight Adaptive Feature Fusion Module for Super-Resolution Algorithms

At present,super-resolution algorithms are employed to tackle the challenge of low image resolution,but it is difficult to extract differentiated feature details based on various inputs,resulting in poor generalization ability.Given this situation,this study first analyzes the features of some feature extraction modules of the current super-resolution algorithm and then proposes an adaptive feature fusion block(AFB)for feature extraction.This module mainly comprises dynamic convolution,attention mechanism,and pixel-based gating mechanism.Combined with dynamic convolution with scale information,the network can extract more differentiated feature information.The introduction of a channel spatial attention mechanism combined with multi-feature fusion further enables the network to retain more important feature information.Dynamic convolution and pixel-based gating mechanisms enhance the module’s adaptability.Finally,a comparative experiment of a super-resolution algorithm based on the AFB module is designed to substantiate the efficiency of the AFB module.The results revealed that the network combined with the AFB module has stronger generalization ability and expression ability.

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

Gate controllable spin transistor with semiconducting tunneling barrier

In this work,we have fabricated a single layer graphene spin transistor on SiO2/Si with a semiconducting tri-layer MoS2 as the tunneling barrier between the ferromagnetic electrodes and the graphene channel.The spin transport in this parallel heterostructure were investigated in detail.The spin switch signal was controlled by tuning the conductivity of MoS2 with different gate voltages.When MoS2 was turned off under negative back gate voltage,the spin switch signal was clearly obtained,whereas it disappeared when MoS2 was conductive under positive back gate bias.This spin transistor showed on,subthreshold and off states when back gate voltage changed from negative to positive.This work exploited a new possibility of semiconducting 2D materials as the tunneling barrier of spin valves.

Quasi-two-dimensional subthreshold current model of deep submicromter SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile

We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.

Design and Manufacture of Dual-gate DDSCR with High Failure Current and Holding Voltage

High-voltage controller area network(CAN)buses have a harsh working environment and require a robust electrostatic discharge(ESD)design window.Thus,ordinary silicon-controlled rectifier(SCR)devices do not satisfy these design requirements.To streamline the design and manufacturing of SCRs,this study proposes a novel dual-gate dual-direction SCR(DG-DDSCR)with a high failure current and holding voltage.First,four polysilicon gates,GateA1,GateA2,GateC1,and GateC2,were introduced to the N+and P+middle regions of the anode and cathode.When the voltage acts on the anode,the electric field generated by the polysilicon gate strengthens the SCR current path while promoting the release of ESD current in the substrate path.Specifically,the holding voltage of the DG-DDSCR and failure current derived from the test results of a transmission line pulse(TLP)are 29.4 V and 16.7 A,respectively.When the clamping voltage was 40 V,the transient current release of the structure can reach 11.61 A,which met the specifications of the CAN bus ESD window and was suitable for the ESD protection of the target application.

Spinal Circuits Transmitting Mechanical Pain and Itch

In 1905, Henry Head first suggested that trans- mission of pain-related protopathic information can be negatively modulated by inputs from afferents sensing innocuous touch and temperature. In 1965, Melzak and Wall proposed a more concrete gate control theory of pain that highlights the interaction between unmyelinated C fibers and myelinated A fibers in pain transmission. Here we review the current understanding of the spinal micro- circuits transmitting and gating mechanical pain or itch. We also discuss how disruption of the gate control could cause pain or itch evoked by innocuous mechanical stimuli, a hallmark symptom for many chronic pain or itch patients.

DSOI—a novel structure enabling adjust circuit dynamically

A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.