A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is exp...A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.展开更多
Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on...Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on the quasi transient state of the rotor rectifying circuit is made, and a nonlinear mapping between the equivalent resistance and the duty cycle is deduced. Furthermore, the method for determining the magnitude of the external resistor is introduced.展开更多
Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Apply...Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Applying this operator to and combining with a system which includes a two-photon interaction between two atoms and an initial vacuum cavity field, and resorting to a resonant strong driving classical field, we obtain an unconventional geometric phase gate with a shorter gating time.展开更多
The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power so...The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.展开更多
SiC MOSFET广泛应用于高频领域,这使其在半桥电路中极易发生串扰现象。实际情况中,半桥电路上、下桥臂的栅极电阻通常保持一致。然而,现有的串扰研究仅在某一桥臂的栅极电阻为定值的条件下分析另一桥臂中栅极电阻的影响,难以获取实际电...SiC MOSFET广泛应用于高频领域,这使其在半桥电路中极易发生串扰现象。实际情况中,半桥电路上、下桥臂的栅极电阻通常保持一致。然而,现有的串扰研究仅在某一桥臂的栅极电阻为定值的条件下分析另一桥臂中栅极电阻的影响,难以获取实际电路中的串扰特性。研究了SiC MOSFET半桥电路串扰特性,分析了上、下桥臂栅极电阻单独变化与同步变化对串扰的影响规律,并探究了不同共源极电感情况下栅极电阻对串扰电压的影响,最后搭建了动态特性测试平台,实验验证了理论分析的正确性。结果表明,与只改变关断器件的栅极电阻相比,上、下桥臂同步变化时串扰电压的正峰值更小,栅极电阻的取值范围也更宽,为半桥电路中SiC MOSFET的低干扰驱动设计提供了理论参考。展开更多
基金This work was supported by the National Nature Science Foundation of China under Grant No.60436030.
文摘A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.
文摘Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on the quasi transient state of the rotor rectifying circuit is made, and a nonlinear mapping between the equivalent resistance and the duty cycle is deduced. Furthermore, the method for determining the magnitude of the external resistor is introduced.
基金Project supported by the National Natural Science Foundation of China （Grant No 60667001）.
文摘Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Applying this operator to and combining with a system which includes a two-photon interaction between two atoms and an initial vacuum cavity field, and resorting to a resonant strong driving classical field, we obtain an unconventional geometric phase gate with a shorter gating time.
文摘The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.
