An Improved Power Efficient Clock Pulsed D Flip-flop Using Transmission Gate

Recent digital applications will require highly efficient and high-speed gadgets and it is related to the minimum delay and power consumption.The proposed work deals with a low-power clock pulsed data flip-flop(D flip-flop)using a transmission gate.To accomplish a power-efficient pulsed D flip-flop,clock gating is proposed.The gated clock reduces the unnecessary switching of the transistors in the circuit and thus reduces the dynamic power consumption.The clock gating approach is employed by using an AND gate to disrupt the clock input to the circuit as per the control signal called Enable.Due to this process,the clock gets turned off to reduce power consumption when there is no change in the output.The proposed transmission gate-based pulsed D flip-flop’s performance with clock gating and without clock gating circuit is analyzed.The proposed pulsed D flip-flop power consumption is 1.586μw less than the without clock gated flip-flop.Also,the authors have designed a 3-bit serial-in and parallel-out shift register using the proposed D flip-flop and analyzed the performance.Tanner Electronic Design Automation tool is used to simulate all the circuits with 45 nm technology.

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated on an AlGaN/GaN heterostructure.The D flip-flop and NAND gate are demonstrated in a GaN system for the first time.The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area,integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate.E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure.At a supply voltage of 2 V,the E/D inverter shows an output logic swing of 1.7 V,a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V.The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.

A 130 nm radiation hardened flip–flop with an annular gate and a C-element

This paper presents a radiation hardened flip-flop with an annular gate and a Muller C-element. The proposed cell has multiple working modes which can be used in different situations. Each part of the cell can be verified easily and completely by using different modes. This cell has been designed under an SMIC 0.13 μm process and 3-D simulated by using Synopsys TCAD. Heavy-ion testing has been done on the cell and its counterparts. The test results demonstrate that the presented cell reduces the cell＇s saturation cross section by approximately two orders of magnitude with little penalty on performance.

Security Enhancement of Arbiter-Based Physical Unclonable Function on FPGA

In order to reduce physical unclonable fixnction （PUF） response instability and imbalance caused by the metastability and the bias of arbiter, this paper uses an improved balanced D flip-plop （DFF） based on the unbalanced DFF to reduce the bias in response output and enhances the security of PUF by adopting two balanced DFFs in series. The experimental results show that two cascaded balanced DFFs improve the stability of the DFF, and the output of two balanced DFFs is more reliable. The entropy of output is fixed at 98.7%.