Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information ...Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.展开更多
In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asym...In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asymmetric trapezoidal flume with a length of 7 m and a width of 0.304 m is considered,with the bottom of the flume transversely inclined at an angle of m=0.296 and vertical lateral sides.The corresponding inflow Froude number is allowed to range in the interval(1.40<F1<6.11).The properties of this jump are compared to those of hydraulic jumps in channels with other types of cross-sections.A relationship for calculating hydraulic jump efficiency is proposed for the considered flume.For F1>5,the hydraulic jump is found to be more effective than that occurring in triangular and symmetric trapezoidal channels.Also,when■mes>8 and■>5,the hydraulic jump in the asymmetrical trapezoidal channel downstream of a parallelogram sluice gate is completely formed as opposed to the situation where a triangular sluice is considered.展开更多
Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promi...Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.展开更多
Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin tra...Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.展开更多
A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.展开更多
We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as m...We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing.展开更多
High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gat...High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gate using two different schemes,adiabatic and diabatic methods.The Clifford based randomized benchmarking(RB) method is used to assess and optimize the CZ gate fidelity.The fidelities of adiabatic and diabatic CZ gates are 99.53(8)% and 98.72(2)%,respectively.We also analyze the errors induced by the decoherence.Comparing to 30 ns duration time of adiabatic CZ gate,the duration time of diabatic CZ gate is 19 ns,revealing lower incoherence error rate r’_(incoherent),int=0.0197(5) compared to r_(incoherent,int)=0.0223(3).展开更多
Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded ve...Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded vertical cavity surface emitting lasers(VCSELs) with optical-injection.Here,two logic inputs are encoded in the detuning of the injected light from a tunable CW laser.The logic outputs are decoded from the two orthogonal polarization lights emitted from the optically injected VCSELs.For the same logic inputs,under electro-optic modulation,we perform various digital signal processing(NOT,AND,NAND,XOR,XNOR,OR,NOR) in the all-optical domain by controlling the logic operation of the applied electric field.Also we explore their delay storages by using the mechanism of the generalized chaotic synchronization.To quantify the reliabilities of these logic gates,we further demonstrate their success probabilities.展开更多
We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensi...We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensitive to heating. Furthermore, the spontaneous emission is suppressed since the ions are always in the electronic ground states. The scheme is robust against small fluctuations of parameters, and the conditional phase is tunable.展开更多
Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,whic...Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.展开更多
We study the phenomenon of decoherence during the operation of one qubit transformation, controlled-not (CNOT) and controlled-controlled-not (C2NOT) quantum gates in a quantum computer model formed by a linear chain o...We study the phenomenon of decoherence during the operation of one qubit transformation, controlled-not (CNOT) and controlled-controlled-not (C2NOT) quantum gates in a quantum computer model formed by a linear chain of three nuclear spins system. We make this study with different type of environments, and we determine the associated decoherence time as a function of the dissipative parameter. We found that the dissipation parameter to get a well defined quantum gates (without significant decoherence) must be within the range of . We also study the behavior of the purity parameter for these gates and different environments and found linear or quadratic decays of this parameter depending on the type of environments.展开更多
By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT- 1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length a...By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT- 1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.展开更多
This paper deals with the vertical vibration, the horizontal translatory and flexural vibrations of plate gate with a flat bottom under the action of unstable submerged underflow. Based on a non linear resonant oscil...This paper deals with the vertical vibration, the horizontal translatory and flexural vibrations of plate gate with a flat bottom under the action of unstable submerged underflow. Based on a non linear resonant oscillator model by which the coupled excitation mechanism between the unstable vortices and gate motion can be simulated, the differential equations for the three types of gate vibrations are established. The parameters in the equations are determined by model experiments. Then, the steady state non linear responses of the three types of gate vibrations are calculated. The calculation results are in good agreement with the experimental data of gate vibrations with different reduced velocity and gate parameters by previous researchers.展开更多
Based on bipolar dynamic logic (BDL) and bipolar quantum linear algebra (BQLA) this work introduces bipolar quantum logic gates and quantum cellular combinatorics with a logical interpretation to quantum entanglement....Based on bipolar dynamic logic (BDL) and bipolar quantum linear algebra (BQLA) this work introduces bipolar quantum logic gates and quantum cellular combinatorics with a logical interpretation to quantum entanglement. It is shown that: 1) BDL leads to logically definable causality and generic particle-antiparticle bipolar quantum entanglement;2) BQLA makes composite atom-atom bipolar quantum entanglement reachable. Certain logical equivalence is identified between the new interpretation and established ones. A logical reversibility theorem is presented for ubiquitous quantum computing. Physical reversibility is briefly discussed. It is shown that a bipolar matrix can be either a modular generalization of a quantum logic gate matrix or a cellular connectivity matrix. Based on this observation, a scalable graph theory of quantum cellular combinatorics is proposed. It is contended that this work constitutes an equilibrium-based logical extension to Bohr’s particle-wave complementarity principle, Bohm’s wave function and Bell’s theorem. In the meantime, it is suggested that the result may also serve as a resolution, rather than a falsification, to the EPR paradox and, therefore, a equilibrium-based logical unification of local realism and quantum non-locality.展开更多
基金supported by the National Natural Science Foundation of China(No.62101439)the Key Research and Development Program of Shaanxi(No.2023-YBSF-289).
文摘Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.
文摘In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asymmetric trapezoidal flume with a length of 7 m and a width of 0.304 m is considered,with the bottom of the flume transversely inclined at an angle of m=0.296 and vertical lateral sides.The corresponding inflow Froude number is allowed to range in the interval(1.40<F1<6.11).The properties of this jump are compared to those of hydraulic jumps in channels with other types of cross-sections.A relationship for calculating hydraulic jump efficiency is proposed for the considered flume.For F1>5,the hydraulic jump is found to be more effective than that occurring in triangular and symmetric trapezoidal channels.Also,when■mes>8 and■>5,the hydraulic jump in the asymmetrical trapezoidal channel downstream of a parallelogram sluice gate is completely formed as opposed to the situation where a triangular sluice is considered.
基金support from the National Natural Science Foundation of China (Grant Nos.51771127,52171188,and 52111530143)the Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province,China (Grant No.2021ZYD0025)+7 种基金supported by JSPS KAKENHI (Grant No.JP22F22061)support from Guangdong Basic and Applied Basic Research Foundation (Grant No.2021B1515120047)Guangdong Special Support Project (Grant No.2019BT02X030)Shenzhen Fundamental Research Fund (Grant No.JCYJ20210324120213037)Shenzhen Peacock Group Plan (No.KQTD20180413181702403)Pearl River Recruitment Program of Talents (Grant No.2017GC010293)the National Natural Science Foundation of China (Grant Nos.11974298 and 61961136006)support from the Grantsin-Aid Scientific Research from JSPS KAKENHI (Grant Nos.JP20F20363,JP21H01364,and JP21K18872)。
文摘Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.
基金the Natioanl Natural Science Foundation of China (Grant No. 11864011)in part by Youth Project of Scientific and technological Research Program of Chongqing Education Commission (Grant No. KJQN202101204)。
文摘Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.
基金Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016)the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。
文摘A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.
基金Project supported by the National Natural Science Foundation (Grant Nos 10574022 and 10575022)the Funds of the Natural Science of Fujian Province, China (Grant No Z0512006)
文摘We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11890704,12004042,and 11674376)the Natural Science Foundation of Beijing,China(Grant No.Z190012)+1 种基金the National Key Research and Development Program of China(Grant No.2016YFA0301800)the Key-Area Research and Development Program of Guang-Dong Province,China(Grant No.2018B030326001)。
文摘High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gate using two different schemes,adiabatic and diabatic methods.The Clifford based randomized benchmarking(RB) method is used to assess and optimize the CZ gate fidelity.The fidelities of adiabatic and diabatic CZ gates are 99.53(8)% and 98.72(2)%,respectively.We also analyze the errors induced by the decoherence.Comparing to 30 ns duration time of adiabatic CZ gate,the duration time of diabatic CZ gate is 19 ns,revealing lower incoherence error rate r’_(incoherent),int=0.0197(5) compared to r_(incoherent,int)=0.0223(3).
基金Project supported by the National Natural Science Foundation of China(Grant No.61475120)the Innovative Projects in Guangdong Colleges and Universities,China(Grant Nos.2014KTSCX134 and 2015KTSCX146)
文摘Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded vertical cavity surface emitting lasers(VCSELs) with optical-injection.Here,two logic inputs are encoded in the detuning of the injected light from a tunable CW laser.The logic outputs are decoded from the two orthogonal polarization lights emitted from the optically injected VCSELs.For the same logic inputs,under electro-optic modulation,we perform various digital signal processing(NOT,AND,NAND,XOR,XNOR,OR,NOR) in the all-optical domain by controlling the logic operation of the applied electric field.Also we explore their delay storages by using the mechanism of the generalized chaotic synchronization.To quantify the reliabilities of these logic gates,we further demonstrate their success probabilities.
基金Supported by the National Natural Science Foundation of China under Grant No 10225421, and the Fund from Fuzhou University.
文摘We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensitive to heating. Furthermore, the spontaneous emission is suppressed since the ions are always in the electronic ground states. The scheme is robust against small fluctuations of parameters, and the conditional phase is tunable.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61068001 and 11264042)the Program for Chun Miao Excellent Talents of Department of Education of Jilin Province,China (Grant No. 201316)
文摘Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.
文摘We study the phenomenon of decoherence during the operation of one qubit transformation, controlled-not (CNOT) and controlled-controlled-not (C2NOT) quantum gates in a quantum computer model formed by a linear chain of three nuclear spins system. We make this study with different type of environments, and we determine the associated decoherence time as a function of the dissipative parameter. We found that the dissipation parameter to get a well defined quantum gates (without significant decoherence) must be within the range of . We also study the behavior of the purity parameter for these gates and different environments and found linear or quadratic decays of this parameter depending on the type of environments.
文摘By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT- 1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.
文摘This paper deals with the vertical vibration, the horizontal translatory and flexural vibrations of plate gate with a flat bottom under the action of unstable submerged underflow. Based on a non linear resonant oscillator model by which the coupled excitation mechanism between the unstable vortices and gate motion can be simulated, the differential equations for the three types of gate vibrations are established. The parameters in the equations are determined by model experiments. Then, the steady state non linear responses of the three types of gate vibrations are calculated. The calculation results are in good agreement with the experimental data of gate vibrations with different reduced velocity and gate parameters by previous researchers.
文摘Based on bipolar dynamic logic (BDL) and bipolar quantum linear algebra (BQLA) this work introduces bipolar quantum logic gates and quantum cellular combinatorics with a logical interpretation to quantum entanglement. It is shown that: 1) BDL leads to logically definable causality and generic particle-antiparticle bipolar quantum entanglement;2) BQLA makes composite atom-atom bipolar quantum entanglement reachable. Certain logical equivalence is identified between the new interpretation and established ones. A logical reversibility theorem is presented for ubiquitous quantum computing. Physical reversibility is briefly discussed. It is shown that a bipolar matrix can be either a modular generalization of a quantum logic gate matrix or a cellular connectivity matrix. Based on this observation, a scalable graph theory of quantum cellular combinatorics is proposed. It is contended that this work constitutes an equilibrium-based logical extension to Bohr’s particle-wave complementarity principle, Bohm’s wave function and Bell’s theorem. In the meantime, it is suggested that the result may also serve as a resolution, rather than a falsification, to the EPR paradox and, therefore, a equilibrium-based logical unification of local realism and quantum non-locality.