掺杂离子对Gd_2O_2S:Eu^(3+)磷光体结构和发光性能的影响

采用高温固相反应法制备出新型红色长余辉发光材料Gd2O2S:Eu3+,Xn+(X为Mg、Si、Ti中的一种或两种),研究掺杂离子对Gd2O2S:Eu3+磷光体的晶体结构、形貌粒度和发光性能的影响。通过X射线粉末衍射(XRD)、扫描电镜(SEM)和分光光度计等对合成产物进行分析与表征。结果表明:掺杂离子没有改变Gd2O2S:Eu3+磷光体的晶体结构,颗粒的形貌为类球形,分散性良好。同时,掺杂离子显著地延长发光材料Gd2O2S:Eu3+的余辉时间,并显示纯正的红色发光。

Thermoelectrical Investigation of Rare Earth Sulfide Materials

Results? are presented on synthesis?? and crystal growth of? Gd2S3-Dy2S3 solid solution sulfides and study of their thermoelectric properties in the range of temperatures 80-400 K. Gd0.2Dy0.8S1.48 composition has the best values of thermoelectric efficiency 0.39 x 10-3/K at 400 K.

微波法制备Gd2O2S:Tb^3+荧光粉

首次用微波法成功制备了Gd2O2S:Tb3+荧光粉,分别用X射线衍射(XRD)、扫描电镜(SEM)、激光粒度仪对产物的晶相、形貌和粒度进行表征,用光致发射光谱(PL)和X射线激发的发射光谱(XEL)对产物的发光性能进行研究。结果表明,样品为单一六方结构的Gd2O2S,形貌完整,粒度分布均匀,D50=1.08μm,PL谱和XEL谱均呈现Tb3+的特征发射峰,最强峰为544nm的绿色发射峰。

新型橙红色长余辉发光材料Gd_2O_2S:Sm^(3+)的合成

采用固相反应法合成了一种新型的橙红色长余辉磷光粉 Gd2 O2 S:Sm3 + ,并用全自动 X射线粉末衍射仪表征了其结构 ,用荧光光谱仪测试了其激发、发射光谱、余辉光谱和余辉衰减曲线。 XRD证实其为单相的硫氧化钆。该磷光体呈现 Sm3 +的三个特征发射 (4G5/2 → 6HJ,J=5 /2 ,7/2 ,9/2 )。经紫外或可见光激发后能观察到长时间明亮的余辉发光。

Preparation of γ-Gd_2 S_3 via thermolysis of Gd[S_2 CN(C_4 H_8)]_3 ·phen coordination

Pure γ-Gd2S3 was synthesized by the thermolysis of a single Gd[S2CN（C4H8）]3 phen complex precursor in a flow of argon carrier gas containing sulfur vapor. The complex precursor was decomposed into amorphous Gd2S3 and carbon at about 350 ℃. Crystalline y-Gd2S3 could be achieved at temperature exceeding 600 ℃, and the obtained γ-Gd2S3 presented a very high degree of crystallinity at 800 ℃. Carbon prevented the formation of Gd2O2S impurity in the preparation of y-Gd2S3. However, the carbon blackened the product. At temperature ≥ 1000 ℃, the residual carbon impurity could be efficiently removed by introducing sulfur into the system for the volatile CS2 could be formed in situ via the reaction of sulfur with the deposited carbon. In the meantime, S also promoted the crystallization of γ-Gd2S3 remarkablely.