Hot Isostatic Pressing and Characterizations of Eu^(3+)-doped(Gd,Lu)_(2)O_(3) Transparent

(Gd,Lu)_(2)O_(3)∶Eu scintillation ceramics have promising applications in the high-energy X-ray imaging.Eu0.1Gd0.6Lu1.3O3 nano-powders with pure phase were prepared from the precursor calcined at 1050℃for 4 h by the co-precipitation method.Using the synthesized nano-powders as initial material,Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics were fabri-cated by vacuum pre-sintering at different temperatures for 2 h and hot isostatic pressing(HIP)at 1750℃for 3 h in ar-gon.The influence of pre-sintering temperature on the microstructure,optical and luminescence properties was investi-gated.The Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics pre-sintered at 1625℃for 2 h combined with HIP post-treatment show the high-est in-line transmittance of 75.2%at 611 nm.The photoluminescence(PL)and X-ray excited luminescence(XEL)spectra of the Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)transparent ceramics demonstrate a strong red emission peak at 611 nm due to the^(5)D_(0)→^(7)F_(2) transition of Eu^(3+).The PL,PLE and XEL intensities of the HIP post-treated Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics show a trend of first ascending and then descending with the increase of pre-sintering temperature.The thermally stimulated lumines-cence(TSL)curve of the HIP post-treated Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics presents one high peak at 178 K and two peaks with lower intensities at 253 K and 320 K.The peak at 320 K may be related to oxygen vacancies,and the lumines-cence peak at 178 K is related to defects caused by the valence state changes of Eu^(3+)ions.

Self-assembled S-scheme In_(2.77)S_(4)/K^(+)-doped g-C_(3)N_(4)photocatalyst with selective O_(2) reduction pathway for efficient H_(2)O_(2) production using water and air

The development of an efficient artificial H_(2)O_(2) photosynthesis system is a challenging work using H_(2)O and O_(2) as starting materials.Herein,3D In_(2.77)S_(4) nanoflower precursor was in-situ deposited on K^(+)-doped g-C_(3)N_(4)(KCN)nanosheets using a solvothermal method,then In_(2.77)S_(4)/KCN(IS/KCN)het-erojunction with an intimate interface was obtained after a calcination process.The investigation shows that the photocatalytic H_(2)O_(2) production rate of 50IS/KCN can reach up to 1.36 mmol g^(-1)h^(-1)without any sacrificial reagents under visible light irradiation,which is 9.2 times and 4.1 times higher than that of KCN and In_(2.77)S_(4)/respectively.The enhanced activity of the above composite can be mainly attributed to the S-scheme charge transfer route between KCN and In_(2.77)S_(4) according to density functional theory calculations,electron paramagnetic resonance and free radical capture tests,leading to an expanded light response range and rapid charge separation at their interface,as well as preserving the active electrons and holes for H_(2)O_(2) production.Besides,the unique 3D nanostructure and surface hydrophobicity of IS/KCN facilitate the diffusion and transportation of O_(2) around the active centers,the energy barriers of O_(2) protonation and H_(2)O_(2) desorption steps are ef-fectively reduced over the composite.In addition,this system also exhibits excellent light harvesting ability and stability.This work provides a potential strategy to explore a sustainable H_(2)O_(2) photo-synthesis pathway through the design of heterojunctions with intimate interfaces and desired reac-tion thermodynamics and kinetics.

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.

Fabrication of Gd_(2)O_(3)-doped CeO_(2)thin films through DC reactive sputtering and their application in solid oxide fuel cells

Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.

Influence of annealing temperature on luminescent properties of Eu^(3+)/V^(5+) co-doped nanocrystalline Gd_2Ti_2O_7 powders

Nanosized Gd2(1–x)Eu2xTi2O7:yV5+ phosphors were prepared via sol-gel method and characterized with X-ray diffraction,Raman spectroscopy,diffuse reflectance spectra and photoluminescence spectra.Their PL properties were investigated as functions of the Eu3+ doping concentration and annealing temperature.The results indicated that the as-prepared samples showed a strong emission of Eu3+ under the irradiation of 303 nm.For Eu3+-doped Gd2Ti2O7,the orange emission at 586 nm was the strongest,which was correspond...

Upconversion Luminescence of Er^(3+), Tm^(3+) and Yb^(3+)Co-doped Gd_3Ga_5O_(12) Nanocrystals

A series of Er3＋, Tm3＋ and Yb3＋ doped Gd3Ga5O12 nanocrystals were prepared by a combustion method. The X-ray diffraction （XRD）, field emission scanning electron microscope （FESEM） and upconversion （UC） emission spectra were used to characterize the samples. The results of XRD indicate that Gd3Ga5O12：Er3＋, Tm3＋, Yb3＋ nanocrystals with cubic phase can be obtained. Under the excitation of a 980 nm laser, the different rare earth ions doped Gd3Ga5O12 nanoerystals show upconversion luminescence involving the green emission attributed to the ^2H11/2→^4I15/2, 4^S3/2→^4I15/2 transitions of Er3＋ ions, respectively, the red emissions assigned to the ^4F9/2→^4I15/2 transitions of Er3＋ ions and the ^1G4→^3F4 as well as 3F2,3→^3H6 transitions of Tm3＋ ions, respectively, the blue emission attributed to ^1G4→^3H6 transitions of Tm3＋ ions, and the near-infrared assigned to the ^3H4→^3H6 transitions of Tm3＋ ions. The CIE coordinates for the samples are calculated. The dependence of their upconversion luminescence properties on Yb3＋ ion concentration is investieated.

Spectroscopy and Energy Transfer in Yb^(3+) and Tm^(3+) Co-doped Gd_3Ga_5O_(12) Crystal

Yb3＋/Tm3＋ co-doped Gd3Ga5O12 single crystal with a dimension of Φ30mm×20mm was grown successfully by Czochralski method.The absorption spectrum was recorded at room temperature and used to calculate the absorption cross-section.Based on the Judd-Ofelt（J-O） theory,we obtained the three intensity parameters and spectral parameters of this crystal,such as the line strengths,oscillator strengths,radiative probabilities and radiative lifetimes as well as the fluorescent branching ratios.Room temperature fluorescence spectra and luminescence decay curves were recorded.The energy transfer between Yb3＋-Tm3＋ was observed and the mechanism was discussed.The stimulated emission cross-section of the 3F4→3H6 transition was calculated by the Füchtbauer-Ladenburg（F-L） equation.The potential laser gains for this transition were also investigated.This crystal is promising as a tunable infrared laser crystal at 2.0 μm.

Preparation and photoelectric properties of Ho^(3+)-doped titanium dioxide nanowire downconversion photoanode

Ho^3＋-doped titanium dioxide（TiO2：Ho^3＋） downconversion（DC） nanowires were synthesized through a simple hydrothermal method followed by a subsequent calcination process after being immersed in Ho（NO3）3 aqueous solution. Moreover, TiO2：Ho^3＋ nanowires（HTNWs） were used as the photoanode in dye-sensitized solar cells（DSSCs） to investigate their photoelectric properties. Scanning electron microscopy（SEM） and X-ray diffraction（XRD） were used to characterize the morphology and structure of the material, respectively. The photofluorescence and ultraviolet-visible absorption spectra of HTNWs reveal a DC from the near and middle ultraviolet light to visible light which matches the strong absorbed region of the N719 dye. Compared with the pure TNW photoanode, HTNWs DC photoanodes show greater photovoltaic efficiency. The photovoltaic conversion efficiency（η） of the DSSCs with HTNWs photoanode doped with 4% Ho2O3（mass fraction） is two times that with pure TNW photoanode. This enhancement could be attributed to HTNWs which could extend the spectral response range of DSSCs to the near and middle ultraviolet region and increase the short-circuit current density（Jsc） of DSSCs, thus leading to the enhancement of photovoltaic conversion efficiency.

新型红色荧光粉K_(5)Gd(MoO_(4))_(4)∶xSm^(3+),yEu^(3+)的发光性能分析

本文采用高温固相法合成新型K5Gd(MoO_(4))_(4)∶xSm^(3+)(x=0~0.10)及K5Gd(MoO_(4))_(4)∶0.04Sm^(3+),yEu^(3+)(y=0.03~0.15)红色荧光粉,并通过X射线衍射仪(XRD)、荧光粉激发光谱,以及热猝灭分析系统、稳态-瞬态光谱仪等对荧光粉的光致激发光谱及荧光发射光谱、荧光猝灭性能等进行分析。研究表明:掺入Eu^(3+),Sm^(3+)后的K_(5)Gd(MoO_(4))_(4)样品不含杂质相,且晶体的结构没有发生改变。在405 nm紫外光的激发下,K_(5)Gd(MoO_(4))_(4)∶0.04Sm^(3+)和K_(5)Gd(MoO_(4))_(4)∶0.04Sm^(3+),0.12Eu^(3+)可以发射出色坐标为(0.6088,0.3904)和(0.6373,0.3592)的橙红光。在K5Gd(MoO_(4))_(4)∶xSm^(3+)(x=0~0.10)荧光粉样品中,随着Sm^(3+)掺杂浓度的增加,荧光粉的发光强度先增强后减弱,最佳的掺杂浓度为x=0.04。在K_(5)Gd(MoO_(4))_(4)∶0.04Sm^(3+),yEu^(3+)(y=0.03~0.15)荧光粉样品中,Eu^(3+)的发光强度随着掺杂浓度的增加呈先增加后减弱的趋势,且在y=0.12处发生浓度猝灭。当温度达到373 K时,K_(5)Gd(MoO_(4))_(4)∶0.04Sm^(3+)荧光粉样品的发光强度是293 K时的94.69%,K_(5)Gd(MoO_(4))_(4)∶0.04Sm^(3+),0.12Eu^(3+)荧光粉样品的荧光强度是293 K时的76.3%,表明两种荧光粉样品都具有较好的热稳定性。色坐标图表明随着Eu^(3+)掺杂量的提高,色坐标从橙红色区域向纯红色区域发生微量移动。由此可见,K_(5)Gd(MoO_(4))_(4)∶xSm^(3+)和K_(5)Gd(MoO_(4))_(4)∶0.04Sm^(3+),yEu^(3+)荧光粉样品都具有作为红色荧光粉应用于白光LED的潜力。

超高效液相色谱-串联质谱法检测乳清蛋白粉中神经节苷脂GD3

建立了超高效液相色谱-串联质谱快速测定乳清蛋白中双唾液酸神经节苷脂(GD3)的方法。通过试验优化样品的初次提取条件(提取剂比例及用量)和再萃取条件(萃取剂用量)。在样品充分溶解后,用4 mL三氯甲烷-甲醇溶液(V_(三氯甲烷)∶V_(甲醇溶液)=1∶2)提取1.0 mL样液,转移合并提取液,加入2.0 mL水进行萃取转移为最佳提取条件。然后分别对质谱与色谱条件(定量扫描模式、色谱柱以及流动相pH)进行优化,选取Syncronis HILIC硅胶色谱柱,以0.01 mol/L乙酸铵水溶液-乙腈(pH5.6)为流动相,进行色谱分离,色谱分离后采用母离子监测模式定量测定和多反应监测模式定性分析。在最佳优化分析条件下,双唾液酸神经节苷脂GD3质量浓度在0.5~50.0μg/mL内具有良好的线性关系,相关系数(R^(2))>0.99,回收率在87.3%~103.7%,精密度(RSD)为4.16%~8.95%,检出限在0.1 g/kg。该方法可用于乳清蛋白粉中双唾液酸神经节苷脂GD3。

Preparation and characterization of Eu^(3+)-doped CaCO_3 phosphor by microwave synthesis

A Eu^3＋-doped CaCO3 phosphor with red emission was prepared by microwave synthesis. The scanning electron microscopy （SEM） image and laser particle size analysis show that the CaCO3：Eu^3＋ particles are needle-like in the length range of 5.0-10.0 μm. The results of X-ray diffraction （XRD） analysis, Fourier transform infrared spectroscopy （FT-IR）, and Raman spectroscopy indicate that pure aragonite CaCO3：Eu^3＋ is prepared using microwave irradiation and the Eu^3＋ ion as a luminescence center inhabits the site of Ca^2＋. The photoluminescence excitation （PLE） spectrum shows that the strong broad band at around 270 nm and weak sharp lines in 300-550 nm are assigned to the charge transfer band of Eu^3＋-O^2- and intra-configurational 4f-4f transitions of Eu^3＋, respectively. The photoluminescence （PL） spectrum implies that the red luminescence can be attributed to the transitions from the ^5D0 excited level to the ^7FJ （J = 0, 1, 2, 3, 4） levels of Eu^3＋ ions with the mainly electric dipole transition ^5D0 → ^7F2 （614 and 620 nm）, and the Eu^3＋ ions prefer to occupy the low symmetric site in the crystal lattice.

Gd^(3+)/Ce^(3+)对Tb^(3+)掺杂氟氧化物玻璃发光敏化作用的影响

本文采用高温熔融法制备了Gd/Tb、Gd/Ce、Gd/Ce/Tb掺杂的SiO_(2)-B_(2)O_(3)-BaF_(2)组分氟氧化物玻璃,通过测试X射线衍射光谱确定了其物相,通过测试其不同波段激发下的荧光光谱研究了不同Gd_(2)O_(3)掺量下Tb^(3+)的发光性能,并确定了Gd_(2)O_(3)更精确的最佳掺量范围。此外,文中通过改变气氛制备了Gd/Ce/Tb共掺杂氟氧化物玻璃,对比研究了Gd^(3+)和Ce^(3+)对Tb^(3+)的敏化作用。结果表明,本文所制备的氟氧化物玻璃都呈稳定的玻璃态;Gd^(3+)和Ce^(3+)对Tb^(3+)的发光都具有敏化作用,且Gd_(2)O_(3)掺量为7%(摩尔分数,下同)时敏化效果相较于其他掺量最为显著,超出7%则造成猝灭;Ce_(2)O_(3)掺入玻璃后以Ce^(3+)和Ce^(4+)两种价态共存,在还原气氛下掺入相较于空气气氛下掺入更容易保持Ce^(3+)状态,而且Ce^(3+)对Tb^(3+)的发光具有敏化作用,Ce^(4+)会抑制Tb^(3+)的发光。

Characterization of the BaBiO_3-doped BaTiO_3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with T_c=155℃

BaBiO3-doped BaTiO3 （BB-BT） ceramic, as a candidate for lead-free positive temperature coefficient of resistivity （PTCR） materials with a higher Curie temperature, has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature, Tc = 155℃, which is higher than that of BaTiO3 （≤ 130 ℃）. Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current （AC） resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data, the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature, indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency, the conduction mechanism is also discussed for a BB-BT ceramic system.

Green and red up-conversion emissions and thermometric application of Er^(3+) -doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.

Promotional effect for SCR of NO with CO over MnO_(x)-doped Fe_(3)O_(4) nanoparticles derived from metal-organic frameworks

MnO_(x)-Fe_(3)O_(4) nanomaterials were fabricated by using the innovative scheme of pyrolyzing manganesedoped iron-based metal organic framework in inert atmosphere and exhibited extraordinary performance of NO reduction by CO(CO-SCR).Multi-technology characterizations were conducted to ascertain the properties of fabricated materials(e.g.,TGA,XRD,SEM,FT-IR,XPS,BET,H_(2)-TPR and O_(2)-TPD).Moreover,the interaction between reactants and catalysts was ascertained by in situ FT-IR.Experimental results demonstrated that Mn was an ideal promoter for iron oxides,resulting in decrease of crystallite size,improve reducibility property,enhance the mobility and the amount of lattice O^(2-) species,as well as strength the adsorption ability of active NO and CO to form multiple species(e.g.,nitrate and carbonate).The unprecedented enhancement of CO-SCR activity over Mn-Fe nanomaterials follows the Eley-Rideal(E-R)and Langmuir-Hinshelwood(L-H)reaction pathway.

Three-photon-excited fluorescence of Tb^(3+)-doped CaO-Al_2O_3-SiO_2 glass by femtosecond laser irradiation

A near infrared to visible blue, green, and red upconversion luminescence in a Tb^3＋-doped CaO-Al2O3-SiO2 glass was studied, which was excited using 800 nm femtosecond laser irradiation. The upconversion luminescence was attributed to ^5D3→^7F5, ^5D3→^7F4, ^5D3→^7F3, ^5D4→^7F6, ^5D4→^7F5, ^5D4→^7F4, and ^5D4→^7F3 transitions of Tb^3＋. The relationship between upconversion luminescence intensity and the pump power indicated that a three-photon simultaneous absorption process was dominant in this upconversion luminescence. The intense red, green, and blue upconversion luminescence of Tb^3＋-doped CaO-Al2O3-SiO2 glass may be potentially useful in developing three-dimensional display applications.

2 μm mid-infrared optical spectra of Tm3+-doped germanium gallate glasses

Glasses with the composition of 65GeO212Ga2O3-10BaO-8Li2O-5La2O3(molar ratio) doped with 1.526 wt.%, 3.006 wt.%, 5.836 wt.%, 11.028 wt.%, and 15.678 wt.% Tm2O3, respectively, were fabricated by conventional melting method. According to the absorption spectra and the Judd-Ofelt theory, the J-O strength parameters (Ω2,Ω4, Ω6) were calculated, with which the radiative transition probabilities,branching ratios and radiative lifetimes were obtained. The infrared emission spectra (with 808 nm LD excitation) at～1.47 and～1.8 μm of various concentrations of Tm3+-doped glasses were studied. The emission intensity at～1.8 μm reached to the maximum when the Tm2O3-doping concentration was near to be～3.006 wt.% (1.0 mol.%), and then decreased as doping concentration increased further. The mechanism of the fluorescence intensity change was explained with the cross-relaxation effect and the concentration quenching effect of Tm3+. Meanwhile, according to McCumber theory, the absorption and emission cross-sections corresponding to the 3F4→3H6 transitions of Tm3+ at 1.8 μm was obtained. For Tm3+-doped germanate glasses, the maximum emission cross-section reached a value higher than that re-ported for fluorozircoaluminate glasses. It is expected to be a favorable candidate host for～2.0 μm mid-inflated laser because the glass shows favorable optical spectra.

Tm^(3+)-doped tellurite glass with Yb^(3+) energy sensitized for broadband amplifier at 1400–1700 nm bands

A kind of novel experiment was disclosed as it possessed two bands of fluorescence emission at 1.4 and 1.6 μm, which were perfectly complimentary to the current C band of optic communication. The fluorescence was based on energy transfer and up-conversion processes between Tm^3＋ and Yb^3＋ under direct pumping of 975 nm LD. The spectra and lifetimes of Tm^3＋ fluorescence in the tellurite glass were described. The corresponding fluorescence characteristics and energy migration process were analyzed by the method of lifetime and intensity comparison. The mechanism of the up-conversion based IR fluorescence was presented upon analyzing the multi-photon pumping process. The potential advantages of Tm^3＋/Yb^3＋ co-doped tellurite glass as amplifier material were concluded.

Laser Cooling Using Anti-Stokes Fluorescence in Yb^(3+)-Doped Fluorozirconate Glasses

The fluorozirconate glasses ZBLANP( ZrF\-4-BaF\-2-LaF\-3-AlF\-3-NaF-PbF\-2) doped with different Yb\+ 3+ concentration were prepared. The Raman spectra and absorption spectra are measured to substantiate the existence of phonon-assisted emission. After analyzing the normalized absorption spectra of samples with different Yb\+ 3+-doped concentration, we calculated the maximum cooling effect in the 3 wt% Yb\+ 3+-doped sample pumped at 1 012.5 nm. The corresponding cooling capability is about -4.09 ℃/W and the cooling efficiency reaches 1.76%.

Mechanism and behaviors of Cr3+-doped TiO2

TiO2 powder and TiO2 thin film on the surface of glazed ceramic tile were prepared by sol-gel method.The influences of different doping Cr3+ concentration on the photocatalytic activity of TiO2 were discussed, UV-visible and X-ray diffraction analysis were used to test the performance of TiO2 powder and film. The results indicate that photocatalytic activity of doping Cr3+-TiO2 thin film is higher than that of powder, and the interaction between Cr3+-doped and substrate can greatly enhance the photocatalytic activity. The results of X-ray diffraction and photoabsorption show that the Cr3+ -doped energy level in TiO2 is 0. 62 eV high from the top of valence band, which belongs to the type of deep energy level doping. On the basis of the semiconductor energy level theory and Cr3+ dopant energy level, the semiconductor energy level model of Cr3+ in TiO2 powder and thin film were established, and the doping mechanisms of Cr3+-doped in TiO2 powder and thin film were analyzed.