The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous so...The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous solution of HCl, and then the films were transferred into a tube furnace for annealing to form superconducting film. It eliminates the degradation of patterning process. The bolometric responsivity of approximately 34. 32 V/W is measured, and the detectivity is greater than 1. 62× 108cm · Hz1/2 · W-1, the noise equivalent powers NEP is 2. 1×10-9W.展开更多
Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu...Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu_3O_(7-δ)(YBCO) and half of HoBa_2Cu_3O_(7-δ)(HBCO) superconducting materials. As the distance between HBCO targetmaterial and substrate is varied , the Ho content in material is changed respectively. When the content of Ho is0. 7 (atom ratio) , the T_c>83K.展开更多
By means of X-ray diffraction investigations and electric resistivity measurements the tempera- ture dependence of phase structure and supercon- ductivity in YBa_2Cu_3O_(7_x) over the temperature range of 20℃-950℃ h...By means of X-ray diffraction investigations and electric resistivity measurements the tempera- ture dependence of phase structure and supercon- ductivity in YBa_2Cu_3O_(7_x) over the temperature range of 20℃-950℃ have been studied.The lattice parameters a,b and c as well as conductivity as a function of annealing temperatures can be roughly divided into three zones which are superconductive orthorhombic structure 1(a<b(?)c/3) at 20℃-500℃,normal conductive orthorhombic structure 2(a<b<c/3)from 550℃ to about 750℃ and semiconductive-like tetragonal structure (a=b<c/3)from about 800℃ to 950℃.However, the boundaries of the three zones is not much distinctive because there is a continuous transi- tion from the orthorhombic to tetragonal struc- ture.Furthermore,the processes of orthorhom- bic-tetragonal transition in the range of 350℃-950℃ are not only continuous but also reversible.The isothermal transition of orthorhombic 2 to orthorhombic 1 occurs at 350℃-500℃,while the maximum rate of transition and high T_c superconductivity can be obtained at about 460℃.This process of isothermal transition depends on the ordering of oxygen atoms or vacancies and the thermodynamic equilibrium to allow the oxygen diffusion.展开更多
Thin films of superconductors HoBa_2Cu_3O_(7-δ)(HBCO) were prepared by DC-sputtering technique. The epi-taxial growth was controlled by the ratio of the oxygen pressure and Ar pressure (O_2/Ar) , the subetrate temper...Thin films of superconductors HoBa_2Cu_3O_(7-δ)(HBCO) were prepared by DC-sputtering technique. The epi-taxial growth was controlled by the ratio of the oxygen pressure and Ar pressure (O_2/Ar) , the subetrate temperature T_s and the distance of the target to subetrate. Thin films deposited under the optimum conditions (Po_2/P_(Ar)= 1:2 ; T_s=730℃) show a critical temlierature clase to 87K and a transition width less than 1K. X-raydiffraction analysis shows that the films are highiy c-axis oriented. Auger electron spectroscopy depth profilingdemonstrates Ho diffusion into the Zr(Y)O_2 subetrate owing to the Ho subetitution for Y.展开更多
YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic fi...YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc.展开更多
We report our progress in the high-temperature superconductor(HTS)Josephson junction fabrication process founded on utilizing a focused helium ion beam damaging technique and discuss the expected device performance at...We report our progress in the high-temperature superconductor(HTS)Josephson junction fabrication process founded on utilizing a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology.Both the achievable high value of characteristic voltage V_(C)=I_(C)R_(N)of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for lowtemperature superconductor(LTS)and HTS circuits even with using a single YBa_(2)Cu_(3)O_(7-x) film layer.A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.展开更多
文摘The patterning technologies and process order of high Tc(86K) super-conducting film bolometers have been studied. After the deposition, a conventional lithographic process was used to pattern the films with aqueous solution of HCl, and then the films were transferred into a tube furnace for annealing to form superconducting film. It eliminates the degradation of patterning process. The bolometric responsivity of approximately 34. 32 V/W is measured, and the detectivity is greater than 1. 62× 108cm · Hz1/2 · W-1, the noise equivalent powers NEP is 2. 1×10-9W.
文摘Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu_3O_(7-δ)(YBCO) and half of HoBa_2Cu_3O_(7-δ)(HBCO) superconducting materials. As the distance between HBCO targetmaterial and substrate is varied , the Ho content in material is changed respectively. When the content of Ho is0. 7 (atom ratio) , the T_c>83K.
文摘By means of X-ray diffraction investigations and electric resistivity measurements the tempera- ture dependence of phase structure and supercon- ductivity in YBa_2Cu_3O_(7_x) over the temperature range of 20℃-950℃ have been studied.The lattice parameters a,b and c as well as conductivity as a function of annealing temperatures can be roughly divided into three zones which are superconductive orthorhombic structure 1(a<b(?)c/3) at 20℃-500℃,normal conductive orthorhombic structure 2(a<b<c/3)from 550℃ to about 750℃ and semiconductive-like tetragonal structure (a=b<c/3)from about 800℃ to 950℃.However, the boundaries of the three zones is not much distinctive because there is a continuous transi- tion from the orthorhombic to tetragonal struc- ture.Furthermore,the processes of orthorhom- bic-tetragonal transition in the range of 350℃-950℃ are not only continuous but also reversible.The isothermal transition of orthorhombic 2 to orthorhombic 1 occurs at 350℃-500℃,while the maximum rate of transition and high T_c superconductivity can be obtained at about 460℃.This process of isothermal transition depends on the ordering of oxygen atoms or vacancies and the thermodynamic equilibrium to allow the oxygen diffusion.
文摘Thin films of superconductors HoBa_2Cu_3O_(7-δ)(HBCO) were prepared by DC-sputtering technique. The epi-taxial growth was controlled by the ratio of the oxygen pressure and Ar pressure (O_2/Ar) , the subetrate temperature T_s and the distance of the target to subetrate. Thin films deposited under the optimum conditions (Po_2/P_(Ar)= 1:2 ; T_s=730℃) show a critical temlierature clase to 87K and a transition width less than 1K. X-raydiffraction analysis shows that the films are highiy c-axis oriented. Auger electron spectroscopy depth profilingdemonstrates Ho diffusion into the Zr(Y)O_2 subetrate owing to the Ho subetitution for Y.
文摘YBa2Cu3O7-x(YBCO) thin film has been epitaxially deposited on (1120) sapphire with Y2O3-stabilized ZrO2 (YSZ) buffer layer and shown a high critical current density Jc of 1. 6×106A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film superconductor has been determined. The(001) plane of the YBCO film is parallel to the(100) surface of the YSZ intermediate layer. YSZ buffer layer with(100) preferred orientation is about 20 nm thick and contains element Ba, due to out-diffusion of Ba from YBCO layer. The(100) preferred orientation of YSZ buffer permits the growth of high quality YBCO thin film. Y2BaCuO5 precipitates with small size distribute uniformly in the YBCO thin film and it is favourable to raise critical current density Jc.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1603900)in part by the Russian Science Foundation(RSCF)(Grant No.19-72-10016-P).
文摘We report our progress in the high-temperature superconductor(HTS)Josephson junction fabrication process founded on utilizing a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology.Both the achievable high value of characteristic voltage V_(C)=I_(C)R_(N)of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for lowtemperature superconductor(LTS)and HTS circuits even with using a single YBa_(2)Cu_(3)O_(7-x) film layer.A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.
